Method for forming an inductor

• US 7,497,005 B2
• Filed: 09/04/2001
• Issued: 03/03/2009
• Est. Priority Date: 02/03/1999
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Ahn, Kie Y., Forbes, Leonard
• Primary Examiner(s): TUGBANG, ANTHONY D
• Application Number:
  US09/946,054
• Publication Number:
  US 20020005565A1
• Time in Patent Office: 2,737 Days
• Field of Search: 296/021, 296/04, 295/99, 296/032.3, 296/032.5, 336/200, 336/205, 336/232, 438/3, 438/381, 438/385, 438/238, 257/528, 257/531, 360/123, 360/126
• US Class Current: 29/602.1
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: Y10T 29/4902 Electromagnet, transformer or inductor
• CPC Class Codes: Y10T 29/4906 Providing winding
• CPC Class Codes: Y10T 29/49064 by coating
• CPC Class Codes: Y10T 29/49069 Data storage inductor or core
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

A method of fabricating an inductor includes selecting a substrate, depositing a layer of magnetic material on the substrate, depositing an insulating layer on the magnetic material layer, forming a inductor pattern from gold on the insulating layer, depositing a second insulating layer on the inductor pattern, and depositing a second magnetic material layer on the second insulating layer.

Claims

1. A method of fabricating an inductor having an inductance comprising:

selecting a substrate;

depositing a first layer of magnetic material on a surface of the substrate;

depositing a first insulating layer on a surface of the first magnetic material layer;

forming a single inductor pattern on a surface of the first insulating layer, the single inductor pattern formed substantially on a single plane, the single inductor pattern formed from gold;

depositing a second insulating layer on a surface of the single inductor pattern, the second insulating layer encapsulating the single inductor pattern; and

depositing a second magnetic material layer on a surface of the second insulating layer, the second magnetic material layer being deposited to a particular thickness to control the inductance, wherein the single inductive pattern is configured to inductively interact with at most the first layer of magnetic material and the second magnetic material layer to confine a magnetic field generated by the single inductor pattern.

2. The method of claim 1, wherein the substrate is a semiconductor.

3. The method of claim 1, wherein the first layer of magnetic material is a ferromagnetic.

4. The method of claim 1, wherein the first insulating layer is silicon dioxide.

5. The method of claim 1, wherein the inductor pattern is a square spiral.

6. The method of claim 1, wherein the inductor pattern is a high-conductivity material.

7. A method of fabricating an inductor having an inductance comprising:

selecting a substrate having a surface;

depositing a first layer of magnetic material to a particular thickness on the surface of the substrate to control the inductance;

depositing a first insulating layer on a surface of the first magnetic material layer;

forming a single inductor pattern on a surface of the first insulating layer, the single inductor pattern formed substantially on a single plane, the single inductor pattern formed from gold;

depositing a second insulating layer on a surface of the single inductor pattern, the second insulating layer encapsulating the single inductor pattern; and

depositing a second magnetic material layer on a surface of the second insulating layer, wherein the single inductor pattern inductively interacts with at most the first layer of magnetic material and the second magnetic material layer to confine a magnetic field generated by the single inductor pattern.

8. The method of claim 7, wherein the substrate comprises a semiconductor.

9. The method of claim 7, wherein the first layer of magnetic material comprises a ferromagnetic material.

10. The method of claim 9, where the ferromagnetic material comprise NiFe.

11. The method of claim 7, wherein the first insulating layer comprises silicon dioxide.

12. The method of claim 7, wherein the inductor pattern comprises a triangular spiral.