Flat panel display

• US 7,498,605 B2
• Filed: 07/23/2004
• Issued: 03/03/2009
• Est. Priority Date: 07/25/2003
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Mobile Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Park, Ji-Yong, Koo, Jae-Bon
• Primary Examiner(s): LOUIE, WAI SING
• Application Number:
  US10/897,108
• Publication Number:
  US 20050017247A1
• Time in Patent Office: 1,684 Days
• Field of Search: 257/184, 257/187, 257/257, 257/290, 257/443, 257/57, 257/59, 257/72, 257/83, 257/351, 257/368
• US Class Current: 257/72
• CPC Class Codes: H10K 2101/80 Composition varying spatially, e.g. having a spatial gradient
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/8792 comprising light absorbing layers, e.g. black layers

Abstract

An organic light emitting device that improves contrast by forming a gate wiring and a data wiring of a black matrix with a concentration gradient between a conductive material of high transmittance and a conductive material of high reflectivity. The organic light emitting device according to the present invention comprises a gate wiring and a data wiring formed on an insulating substrate, a pixel portion formed by the gate wiring and the data wiring, and a pixel arranged in the pixel portion, wherein at least one of the gate wiring and the data wiring is formed of a conductive light-absorbing material. At least one of the wirings is formed of a light-absorbing material with the concentration gradient between the conductive material of the high transmittance and the conductive material of the high reflectivity. The conductive material of the high reflectivity is composed of at least one of Al, Mo, Ti, Cu, Ag, or similar material, and the conductive material with high transmittance is composed of at least one of ITO, IO, TO, IZO, ZnO or similar material. The gate wiring includes a gate line, a gate electrode of a thin film transistor, a capacitor electrode, or a power line, and the data wiring includes a data line, source and drain electrodes of the thin film transistor, the capacitor electrode, or the power line.

Claims

1. A thin film transistor, comprising:

a semiconductor layer formed on a substrate;

a gate electrode; and

a source electrode and a drain electrode connected to the semiconductor layer,

wherein at least one of the gate electrode, the source electrode, and the drain electrode includes a conductive light-absorbing material, wherein the conductive light-absorbing material comprises a metal material and a transparent conductive material,

wherein the at least one of the electrodes is formed of a concentration gradient layer with a concentration gradient between the metal material and the transparent conductive material.

2. The thin film transistor according to claim 1, wherein a content of the transparent conductive material gradually increases toward the substrate while a content of the metal material gradually increases away from the substrate.

3. The thin film transistor according to claim 1, wherein a content of the metal material gradually increases toward the substrate while a content of the transparent conductive material gradually increases away from the substrate.

4. The thin film transistor according to claim 1, wherein a content of the metal material gradually increases toward a central part thereof while a content of the transparent conductive material gradually increases away from the central part toward the substrate.

5. The thin film transistor according to claim 1, wherein the metal material includes at least one material selected from the group consisting of Al, Mo, Cu, Ti and Ag.

6. The thin film transistor according to claim 1, wherein the concentration gradient varies continuously.

7. The thin film transistor according to claim 1, wherein the concentration gradient varies discontinuously.

8. An organic light emitting device, comprising:

a gate wiring and a data wiring formed on an insulating substrate;

a pixel portion formed by the gate wiring and the data wiring; and

a pixel arranged in the pixel portion,

wherein at least one of the gate wiring and the data wiring is formed of a concentration gradient layer with a concentration gradient between a transparent conductive material and a metal material, and wherein the transparent conductive material includes at least one material selected from the group consisting of ITO, IO, TO, IZO and ZnO.

9. The organic light emitting device according to claim 8, wherein a content of the transparent conductive material gradually increases in a same direction as a direction in which light is emitted.

10. The organic light emitting device according to claim 8, wherein the organic light emitting device is of a bottom-emitting type, and

a content of the transparent conductive material gradually increases toward the substrate while a content of the metal material gradually increases away from the substrate.

11. The organic light emitting device according to claim 10, wherein the pixel comprises a transistor, a capacitor and an EL device, and

the gate wiring includes at least one of a gate line, a gate electrode of the transistor, a capacitor electrode and a power line.

12. The organic light emitting device according to claim 11, further comprising a light-absorbing material pattern formed on the substrate, except for an area in which light is emitted from the EL device, where the light-absorbing material pattern is electrically separated from the gate wiring.

13. The organic light emitting device according to claim 10, wherein the pixel comprises a transistor, a capacitor and an EL device, and the data wiring includes at least one of a data line, a source electrode of the transistor, a drain electrode of the transistor, a capacitor electrode and a power line.

14. The organic light emitting device according to claim 13, further comprising a light-absorbing material pattern formed on the substrate, except for an area in which light is emitted from the EL device, where the light-absorbing material pattern is electrically separated from the data wiring.

15. The organic light emitting device according to claim 8, wherein the organic light emitting device is of a top-emitting type, and a content of the metal material gradually increases toward the substrate while a content of the transparent conductive material gradually increases away from the substrate.

16. The organic light emitting device according to claim 15, wherein the pixel comprises a transistor, a capacitor and an EL device, and the gate wiring includes at least one of a gate line, a gate electrode of the transistor, a capacitor electrode and a power line.

17. The organic light emitting device according to claim 16, further comprising a light-absorbing material pattern formed on the substrate including an area in which light is emitted from the EL device, where the light-absorbing material pattern is electrically separated from the gate wiring.

18. The organic light emitting device according to claim 15, wherein the pixel comprises a transistor, a capacitor and an EL device, and the data wiring includes at least one of a data line, a source electrode of the transistor, a drain electrode of the transistor a capacitor electrode and a power line.

19. The organic light emitting device according to claim 18, further comprising a light-absorbing material pattern formed on the substrate including an area in which light is emitted from the EL device, where the light-absorbing material pattern is electrically separated from the data wiring.

20. The organic light emitting device according to claim 8 wherein the organic light emitting device is of a double-side emitting type, and a content of the metal material gradually increases toward a central part thereof while a content of the transparent conductive material gradually increases away from the central part toward the substrate and a central part of the substrate.

21. The organic light emitting device according to claim 20, wherein the pixel comprises a transistor, a capacitor and an EL device, and the gate wiring includes at least one of a gate line, a gate electrode of the transistor, a capacitor electrode and a power line.

22. The organic light emitting device according to claim 21, further comprising a light-absorbing material pattern formed on the substrate, except for an area in which light is emitted from the EL device, where the light-absorbing material pattern in electrically separated from the gate wiring.

23. The organic light emitting device according to claim 20, wherein the pixel comprises a transistor, a capacitor and an EL device, and the data wiring includes at least one of a data line, a source electrode of the transistor, a drain electrode of the transistor, a capacitor electrode and a power line.

24. The organic light emitting device according to claim 23, further comprising a light-absorbing material pattern formed on the substrate, except for an area in which light is emitted from the EL device, where the light-absorbing material pattern is electrically separated from the data wiring.

25. The organic light emitting device according to claim 8, wherein the metal material includes at least one material selected from the group consisting of Al, Mo, Cu, Ti and Ag.

26. The organic light emitting device according to claim 8, wherein the concentration gradient varies continuously.

27. The organic light emitting device according to claim 8, wherein the concentration gradient varies discontinuously.

28. A thin film transistor, comprising:

a semiconductor layer formed on a substrate;

a gate electrode; and

a source electrode and a drain electrode connected to the semiconductor layer,

wherein at least one of the gate electrode, the source electrode, and the drain electrode includes a conductive light-absorbing material, wherein the conductive light-absorbing material comprises a metal material and a transparent conductive material, and wherein the transparent conductive material includes at least one material selected from the group consisting of ITO, IO, TO, IZO, and ZnO, and

wherein the at least one of the electrodes is formed of a concentration gradient layer with a concentration gradient between the metal material and the transparent conductive material.

29. The thin film transistor according to claim 28, wherein a content of the transparent conductive material gradually increases toward the substrate while a content of the metal material gradually increases away from the substrate.

30. The thin film transistor according to claim 28, wherein a content of the metal material gradually increases toward the substrate while a content of the transparent conductive material gradually increases away from the substrate.

31. The thin film transistor according to claim 28, wherein a content of the metal material gradually increases toward a central part thereof while a content of the transparent conductive material gradually increases away from the central part toward the substrate.

32. The thin film transistor according to claim 28, wherein the metal material includes at least one material selected from the group consisting of Al, Mo, Cu, Ti, and Ag.

33. The thin film transistor according to claim 28, wherein the concentration gradient varies continuously.

34. The thin film transistor according to claim 28, wherein the concentration gradient varies discontinuously.