Epi-structure with uneven multi-quantum well and the method thereof

• US 7,498,607 B2
• Filed: 05/16/2007
• Issued: 03/03/2009
• Est. Priority Date: 02/09/2007
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Huga Optotech Incorporated (Epistar Corporation)
• Inventors: Tsai, Tzong-Liang, Cheng, Chih-Ching
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US11/798,750
• Publication Number:
  US 20080191190A1
• Time in Patent Office: 657 Days
• Field of Search: 257/94, 257/96, 257/103, 257/E33.062, 257/E33.074
• US Class Current: 257/94
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01S 2304/04 MOCVD or MOVPE
• CPC Class Codes: H01S 5/3407 characterised by special barrier layers
• CPC Class Codes: H01S 5/3408 characterised by specially shaped wells, e.g. triangular
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.

Claims

1. An epi-structure applied to a light-emitting device, comprising:

a substrate;

a first semiconductor conductive layer formed on said substrate;

an active layer formed on said first semiconductor conductive layer, wherein said active layer has a plurality of uneven multiple quantum wells; and

a second semiconductor conductive layer formed on said active layer;

wherein a plurality of particles made from at least one hetero-material are scattered between said first semiconductor conductive layer and said active layer and configured for formation of said uneven multiple quantum well.

2. An epi-structure according to claim 1, wherein each one of said uneven multiple quantum well has a cross section with a ratio of width to height in a range between 3 to 1 and 1 to 10.

3. An epi-structure according to claim 1, wherein said substrate is made from a material selected from the groups consisting of sapphire, GaN, SiC, GaAs, AlN, GaP, Si, ZnO, MgO and glass material.

4. An epi-structure according to claim 1, wherein said first semiconductor conductive layer is an N-Type semiconductor layer.

5. An epi-structure according to claim 1, wherein said first semiconductor conductive layer is made from a material selected from the groups consisting of AlN, GaN, InN, AlGaN, InGaN and InAlGaN.

6. An epi-structure according to claim 1, wherein said multiple quantum well is made from a material selected from the groups consisting of AlN, GaN, InN, AlGaN, InGaN and InAlGaN.

7. An epi-structure according to claim 1, wherein said second semiconductor conductive layer is a P-Type semiconductor layer.

8. An epi-structure according to claim 1, wherein said second semiconductor conductive layer is made from a material selected from the groups consisting of AlN, GaN, InN, AlGaN, InGaN and InAlGaN.

9. An epi-structure according to claim 1, wherein said particles made from the hetero-material comprise a hetero-material different from the first semiconductor conductive layer.

10. An epi-structure according to claim 1, wherein said particles made from the hetero-material are made from a material selected from the groups consisting of II group, III group, V group, VI group, III-V group compound, II-V group compound and II-VI group compound.

11. An epi-structure according to claim 1, wherein each one of said uneven multiple quantum well has a surface roughness Ra in a range between 0.5 and 50 nanometers.

12. An epi-structure according to claim 11, wherein each one of said uneven multiple quantum well has the surface roughness Ra in the range between 30 and 40 nanometers.

13. A light-emitting device, comprising:

a first electrode;

a substrate formed on said first electrode;

a first semiconductor conductive layer formed on said substrate;

an active layer formed on said first semiconductor conductive layer, wherein said active layer have a plurality of uneven multiple quantum well;

a second semiconductor conductive layer formed on said active layer;

a transparent conductive layer formed on said second semiconductor conductive layer; and

a second electrode formed on said transparent conductive layer;

wherein a plurality of particles made from at least one hetero-material are scattered between said first semiconductor conductive layer and said active layer and configured for formation of the uneven multiple quantum well.

14. A light-emitting device according to claim 13, wherein the multiple quantum well is made from a material selected from the groups consisting of AlN, GaN, InN, AlGaN, InGaN and InAlGaN.

15. A light-emitting device according to claim 13, wherein the transparent conductive layer is made from a material selected from the groups consisting of Ni/Au, NiO/Au, Ta/Au, TiWN, TiN, Indium Tin Oxide, Chromium Tin Oxide, Antimony Tin Oxide, Znic Aluminum Oxide and Znic Tin Oxide.

16. A light-emitting device according to claim 13, wherein the particles made from the hetero-material comprise a hetero-material different from the first semiconductor conductive layer.

17. A light-emitting device according to claim 16, wherein the particles made from the hetero-material are made from a material selected from the groups consisting of II group, III group, V group, VI group, III-V group compound, II-V group compound and II-VI group compound.

18. A light-emitting device according to claim 13, wherein the uneven multiple quantum well are made from a nitride material.

19. A light-emitting device according to claim 13, wherein the uneven multiple quantum well is phosphide, arsenide, or phosphorous arsenide material.

20. An epi-structure, which has a plurality of uneven multiple quantum well, comprising:

a semiconductor conductive layer formed on a substrate and a multiple quantum well layer formed on said semiconductor conductive layer to form an epi-structure of multiple quantum well, wherein the characteristics of said epi-structure are on;

at least one hetero-material are scattered between said first semiconductor conductive layer and said multiple quantum well layer and configured for formation of the uneven multiple quantum well.

21. An epi-structure according to claim 20, wherein the multiple quantum well is made from a material selected from the groups consisting of AlN, GaN, InN, AlGaN, InGaN and InAlGaN.

22. An epi-structure according to claim 20, wherein particles made from the hetero-material comprise a hetero-material different from the semiconductor conductive layer.

23. An epi-structure according to claim 22, wherein the particles made from the hetero-material are made from a material selected from the groups consisting of II group, III group, V group, VI group, II-V group compound, II-V group compound and II-VI group compound.

24. An epi-structure according to claim 20, wherein the uneven multiple quantum well are made from a nitride material.