Lithographic apparatus, method, and computer program product for generating a mask pattern and device manufacturing method using same

• US 7,500,218 B2
• Filed: 08/17/2004
• Issued: 03/03/2009
• Est. Priority Date: 08/17/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Van Der Mast, Karel Diederick, Baselmans, Johannes Jacobus Matheus, Troost, Kars Zeger
• Primary Examiner(s): GARBOWSKI, LEIGH M
• Application Number:
  US10/919,532
• Publication Number:
  US 20060040187A1
• Time in Patent Office: 1,659 Days
• Field of Search: None
• US Class Current: 716/54
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70283 Mask effects on the imaging process
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]

Abstract

Grayscale Optical Proximity Correction device features are added to a mask pattern by convoluting the device features with a two-dimensional correction kernel or two one-dimensional correction kernels to generate grayscale OPC features. The resulting pattern may be used in a projection lithography apparatus having a programmable patterning means that is adapted to generate three or more intensity levels. An iterative process of simulating an aerial image that would be produced by the pattern, comparing the simulation to the desired pattern, and adjusting the OPC features may be used to generate an optimum pattern for projection.

Claims

1. A method of generating a mask pattern for controlling an array of individually controllable elements, comprising:

(a) receiving a device pattern representing one or more features to be printed; and

(b) generating the mask pattern comprising the one or more features from the device pattern having a first intensity level against a background having a second intensity level and at least one correction feature having a third intensity level, the third intensity level being between the first and second intensity levels, whereby the generated mask pattern is configured to be used to pattern a substrate by controlling elements of the array of individually controllable elements.

2. The method of claim 1, wherein step (b) comprises:

(b1) convoluting the device pattern with a correction kernel.

3. The method of claim 2, wherein the correction kernel is two dimensional.

4. The method of claim 2, wherein the correction kernel is one dimensional and step (b) further comprises:

(b2) convoluting the device pattern with a second correction kernel, the second correction kernel being one dimensional and orthogonal to the correction kernel.

5. The method of claim 1, wherein the generating comprises inserting correction features according to at least one predetermined rule.

6. The method of claim 1, wherein step (b) comprises:

(b1) inserting correction features based on correlating intensity of the correction feature to proximity of printing features.

7. The method of claim 1, further comprising:

(c) generating a data file formatted to be used in control of the array of individually controllable elements to impart the mask pattern to a beam.

8. The method of claim 1, further comprising:

(c) simulating an aerial image that would be produced on projection of the mask pattern in a lithographic projection apparatus;

(d) comparing the simulated aerial image to the device pattern; and

(e) modifying the mask pattern so that a modified aerial image of the modified mask pattern more closely resembles the device pattern.

9. The method of claim 8, wherein step (e) comprises:

(e1) generating, based on the results of step (d), a correction kernel; and

(e2) convoluting the mask pattern with a correction kernel to generate the modified mask pattern.

10. The method of claim 8, wherein steps (c)-(e) are repeated a predetermined number of times.

11. The method of claim 8, wherein steps (c)-(e) are repeated until a result of the comparing is below a predetermined threshold.

12. A device manufacturing method for controlling an array of individually controllable elements of a maskless lithography tool, comprising:

(a) receiving a device pattern representing features to be printed;

(b) generating a mask pattern comprising device features having a first intensity level against a background having a second intensity level and at least one correction feature having a third intensity level, the third intensity level being between the first and second intensity levels;

(c) using the array of individually controllable elements to spatially modulate a beam according to the mask pattern; and

(d) projecting the patterned beam of radiation onto a target portion of a substrate.

13. The method of claim 12, wherein step (b) comprises:

convoluting the device pattern with a correction kernel.

14. The method of claim 13, wherein the correction kernel is two dimensional.

15. The method of claim 13, wherein the correction kernel is one dimensional and step (b) further comprises:

(b2) convoluting the device pattern with a second correction kernel, the second correction kernel being one dimensional and orthogonal to the correction kernel.

16. The method of claim 12, wherein step (b) comprises:

inserting correction features according to at least one predetermined rule.

17. The method of claim 12 wherein step (b) comprises:

inserting correction features through correlating of intensity of the correction feature to proximity of printing features.

18. The method of claim 12, further comprising:

(e) generating a data file formatted to be used in control of a the array of individually controllable elements to impart the mask pattern to a beam.

19. The method of claim 12, further comprising:

(e) simulating an aerial image that would be produced on projection of the mask pattern in the maskless lithography tool;

(f) comparing the simulated aerial image to the device pattern; and

(g) modifying the mask pattern so that a modified aerial image of the modified mask pattern more closely resembles the device pattern.

20. The method of claim 19 wherein step (g) comprises:

(g1) generating, based on the results of step (f), a further correction kernel; and

(g2) convoluting the mask pattern with a correction kernel to generate the modified mask pattern.

21. The method of claim 19 wherein steps (e)-(g) are repeated one or more times.

22. The method of claim 19 wherein steps (e)-(g) are repeated until the result of step (f) is below a predetermined threshold.

23. A maskless lithographic apparatus, comprising:

an illumination system that supplies a beam of radiation;

a patterning array of individually controllable elements that spatially modulate the beam thereby resulting in a patterned beam;

a projection system that projects the patterned beam onto a target portion of a substrate; and

a controller that controls the patterning array of individually controllable elements so that elements of the patterning array of individually controllable elements adopt one or more states representing a projection pattern, the projection pattern comprising a convolution of a device pattern and a correction kernel.

24. The apparatus of claim 23, wherein the controller receives data representing the device pattern and convolutes the device pattern and the correction kernel.

25. The apparatus of claim 24, wherein the controller convolutes the device pattern with a two dimensional form of the correction kernel.

26. The apparatus of claim 24, wherein the controller convolutes the device pattern with a one dimensional form of the correction kernel to generate an intermediate pattern and then convolutes the intermediate pattern with a second one dimensional correction kernel to generate the patterned beam.

27. The apparatus of claim 23, wherein the patterning array of individually controllable elements modulates the beam with a pattern having three or more intensity levels.

28. The apparatus of claim 27, wherein the correction kernel generates correction features having at least one intensity level intermediate of a high and a low intensity level of the device pattern.

29. In a projection lithography apparatus having a patterning array of individually controllable elements settable to three or more states that modulates a beam and a projection system that projects the modulated beam onto a substrate to print a pattern thereon, without using a mask, defined by the modulation effected by the patterning array of individually controllable elements, a pattern corrector receives a two level device pattern and convolutes the device pattern with a correction kernel to generate correction features having intensity levels of at least one level between the levels of the device pattern.