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Method for controlling the structure and surface qualities of a thin film and product produced thereby

  • US 7,501,299 B2
  • Filed: 02/17/2006
  • Issued: 03/10/2009
  • Est. Priority Date: 11/14/2005
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating a light emitting semiconductor device of a type which emits light in the ultra violet wavelengths from a first surface at which an Al2O3 substrate was originally located comprising:

  • forming a GaN buffer layer over and in contact with said Al2O3 substrate so as to create a bond at the interface between said GaN layer and said Al2O3 substrate;

    forming a GaN/AlN short period superlattice layer over and in contact with said GaN buffer layer;

    forming cladding and multiple-quantum-well active layers over said Ga/AlN short period superlattice layer;

    securing the semiconductor device to a heat sink substrate on a second surface of the semiconductor device opposite said first surface;

    weakening the bond between the GaN layer and the Al2O3 substrate by irradiating, through the Al2O3 substrate, the interface between the GaN layer and the Al2O3 substrate;

    physically removing the Al2O3 substrate to thereby expose a surface of the GaN layer;

    applying a planarizing coating over and in physical contact with the exposed surface of the GaN layer;

    etching the planarized coating and GaN layer to at least significantly remove both; and

    etching said GaN/AlN short period superlattice layer such that it is substantially removed to thereby permit access to a surface exposed by said etching of said GaN/AlN short period superlattice layer;

    to thereby produce said light emitting semiconductor device having said heat sink substrate located at said second surface, and light emission through said first surface.

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