Metal gate device with reduced oxidation of a high-k gate dielectric
First Claim
Patent Images
1. A method for making a semiconductor device, comprising:
- forming a high-k gate dielectric layer on a semiconductor substrate;
forming a metal gate electrode on the high-k gate dielectric layer, the metal gate electrode having a first side and a second side;
forming a first set of spacers on the first and second sides of the metal gate electrode, wherein the first set of spacers is substantially free of oxygen; and
forming a capping layer that is substantially free of oxygen on a top surface of the substrate layer, sides of the first set of spacers, and a top surface of the metal gate electrode.
4 Assignments
0 Petitions
Accused Products
Abstract
Embodiments of the invention provide a device with a metal gate, a high-k gate dielectric layer and reduced oxidation of a substrate beneath the high-k gate dielectric layer. An oxygen barrier, or capping, layer on the high-k gate dielectric layer and metal gate may prevent such oxidation during processes such as spacer formation and annealing of ion implanted regions.
52 Citations
13 Claims
-
1. A method for making a semiconductor device, comprising:
-
forming a high-k gate dielectric layer on a semiconductor substrate; forming a metal gate electrode on the high-k gate dielectric layer, the metal gate electrode having a first side and a second side; forming a first set of spacers on the first and second sides of the metal gate electrode, wherein the first set of spacers is substantially free of oxygen; and forming a capping layer that is substantially free of oxygen on a top surface of the substrate layer, sides of the first set of spacers, and a top surface of the metal gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
Specification