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Metal gate device with reduced oxidation of a high-k gate dielectric

  • US 7,501,336 B2
  • Filed: 06/21/2005
  • Issued: 03/10/2009
  • Est. Priority Date: 06/21/2005
  • Status: Active Grant
First Claim
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1. A method for making a semiconductor device, comprising:

  • forming a high-k gate dielectric layer on a semiconductor substrate;

    forming a metal gate electrode on the high-k gate dielectric layer, the metal gate electrode having a first side and a second side;

    forming a first set of spacers on the first and second sides of the metal gate electrode, wherein the first set of spacers is substantially free of oxygen; and

    forming a capping layer that is substantially free of oxygen on a top surface of the substrate layer, sides of the first set of spacers, and a top surface of the metal gate electrode.

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