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Test structure of semiconductor device

  • US 7,501,651 B2
  • Filed: 10/05/2005
  • Issued: 03/10/2009
  • Est. Priority Date: 11/30/2004
  • Status: Active Grant
First Claim
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1. A test structure of a semiconductor device comprising:

  • first and second active regions which are electrically isolated from each other by a first field isolation region and on which silicided first and second junction regions are formed, respectively;

    a semiconductor substrate which has a same conductivity type as the silicided first and second junction regions;

    a well which is formed on lower parts of the silicided first and second junction regions and has a conductivity type different from the silicided first and second junction regions, and surrounds the first field isolation region; and

    first and second pads electrically connected respectively to the silicided first and second junction regions for receiving an application of an electrical signal and outputting a detected signal, wherein the first and second pads are formed on the same level as a lower part of a metal layer or on the same level as the semiconductor substrate.

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