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Method of manufacturing semiconductor device having a circuit including thin film transistors

  • US 7,501,653 B2
  • Filed: 09/12/2005
  • Issued: 03/10/2009
  • Est. Priority Date: 04/06/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a silicon nitride film on an insulating surface;

    a light shielding film over the patterned silicon nitride film;

    a silicon oxide film formed over the patterned light shielding film;

    a semiconductor layer over the silicon oxide film;

    a gate insulating film covering the semiconductor layer; and

    a wiring formed over the gate insulating film, wherein the wiring is electrically connected to the light shielding film.

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