Electrode device for organic device, electronic device having electrode device for organic device, and method of forming electrode device for organic device

• US 7,504,049 B2
• Filed: 08/17/2004
• Issued: 03/17/2009
• Est. Priority Date: 08/25/2003
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kumaki, Daisuke, Tsutsui, Tetsuo
• Primary Examiner(s): Mc Ginty; Douglas
• Assistant Examiner(s): Nguyen; Khanh Tuan
• Application Number:
  US10/919,334
• Publication Number:
  US 20050123751A1
• Time in Patent Office: 1,673 Days
• Field of Search: 252/514, 252/511, 252/500, 313/504, 313/498, 313/506, 525/279, 257/666, 257/123, 315/169.3, 429/209, 429/213
• US Class Current: 252/500
• CPC Class Codes: H01B 1/20 Conductive material dispersed in non-conductive organic material organic macromolecular compounds or compositions C08
• CPC Class Codes: H01B 1/22 the conductive material comprising metals or alloys
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 50/19 Tandem OLEDs
• CPC Class Codes: H10K 50/82 Cathodes
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/631 Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
• CPC Class Codes: Y10T 428/2913 Rod, strand, filament or fiber

Abstract

To provide an electrode for an organic device which can realize a hole injection function and/or an electron injection function from a totally different point of view from metal donor doping. A composite material in which conductive particles of a particulate conductive inorganic compound (the diameter is 1 (nm) to 100 (nm), preferably, 1 (nm) to 20 (nm)) are dispersed in one or plural kinds of organic compounds 101 is layered on a surface of an organic layer 110 of an organic device where an electrode is to be formed to form an electrode for an organic device 100. As to the thus formed electrode, since the densely dispersed conductive particles 102 have large specific surface area, interaction between the conductive particles 102 and the organic compound 101 realizes a function of a donor or an acceptor. Besides, since adhesion with the organic layer 110 is high for the existence of the matrix of the organic compound 101, the electrode is suitable for an organic device.

Claims

1. An electrode used for an organic device,

wherein said electrode comprises a composite material in which conductive particles constituting a conductive inorganic compound are dispersed in a matrix including a pi-conjugated organic compound,

wherein the conductive inorganic compound is selected from the group consisting of an inorganic nitride, an inorganic phosphide, an inorganic sulfide, an inorganic selenide, and an inorganic telluride, and

wherein a weight ratio of the conductive inorganic compound to the pi-conjugated organic compound is more than ½

and less than 4/1.

2. The electrode for the organic device according to claim 1,

wherein a particle diameter of one of the conductive particles is 1 nm to 100 nm.

3. The electrode for the organic device according to claim 1,

wherein a conductivity of the conductive inorganic compound is 10⁻

5 S/m or more.

4. An electronic device comprising the electrode for the organic device according to claim 1,

wherein the electronic device is one selected from the group consisting of a cellular phone, a personal computer, a monitor, a video camera, a digital camera, a goggle type display, a navigation system, audio components, a car audio system, a game machine, a mobile computer, a portable game machine, an electronic book, and an image reproducing device equipped with a recording medium.

7. An organic EL element comprising the electrode for the organic device according to claim 1.

8. An organic field effect transistor comprising the electrode for the organic device according to claim 1.

17. The electrode for the organic device according to claim 1,

wherein a work function of the conductive inorganic compound is 4.2 eV or less.

18. The electrode for the organic device according to claim 1,

wherein a work function of the conductive inorganic compound is more than 4.2 eV.

5. A method of forming an electrode for an organic device, the method comprising:

dispersing pi-conjugated organic compound and conductive particles constituting a conductive inorganic compound in a solvent,

wherein the conductive inorganic compound is selected from the group consisting of an inorganic nitride, an inorganic phosphide, an inorganic sulfide, an inorganic selenide, and an inorganic telluride; and

wet-coating on a surface where the electrode for the organic device is formed, with a solution comprising the organic compound, the conductive particles, and the solvent to form the electrode for the organic device,

wherein a weight ratio of the conductive inorganic compound to the pi-conjugated organic compound is more than ½ and

less than 4/1.

6. A method of forming an electrode for an organic device, the method comprising:

co-depositing a pi-conjugated organic compound and a conductive inorganic compound on a surface where the electrode for the organic device is formed to form the electrode for the organic device where a weight ratio of the conductive inorganic compound to the organic compound is more than ½ and

less than 4/1,

wherein the conductive inorganic compound is selected from the group consisting of an inorganic nitride, an inorganic phosphide, an inorganic sulfide, an inorganic selenide, and an inorganic telluride, and

wherein the conductive inorganic compound is dispersed in a matrix of the pi-conjugated organic compound.

9. A semiconductor device comprising:

a first electroluminescent layer comprising a pi-conjugated organic material;

a second electroluminescent layer adjacent to the first electroluminescent layer, the second electroluminescent layer comprising a pi-conjugated organic material; and

an electrode provided between the first electroluminescent layer and the second electroluminescent layer,

wherein the electrode comprises a composite material in which conductive particles constituting a first conductive inorganic compound of which a work function is 4.2 eV or less and a second conductive inorganic compound of which a work function is more than 4.2 eV are dispersed in a pi-conjugated organic compound,

wherein the first conductive inorganic compound and the second conductive inorganic compound are selected from the group consisting of an inorganic nitride, an inorganic phosphide, an inorganic sulfide, an inorganic selenide, and an inorganic telluride, and

wherein a weight ratio of the first conductive inorganic compound and the second conductive inorganic compound to the pi-conjugated organic compound is more than ½ and

less than 4/1.

10. The semiconductor device according to claim 9,

wherein a particle diameter of one of the conductive particles is 1 nm to 100 nm.

11. The semiconductor device according to claim 9,

wherein a conductivity of at least one of the first and second conductive inorganic compounds is 10⁻

5 S/m or more.

12. The semiconductor device according to claim 9,

wherein the semiconductor device is one selected from the group consisting of a cellular phone, a personal computer, a monitor, a video camera, a digital camera, a goggle type display, a navigation system, audio components, a car audio system, a game machine, a mobile computer, a portable game machine, an electronic book, and an image reproducing device equipped with a recording medium.

13. A semiconductor device comprising:

a first electroluminescent layer comprising a pi-conjugated organic material;

a second electroluminescent layer adjacent to the first electroluminescent layer, the second electroluminescent layer comprising a pi-conjugated organic material; and

an electrode provided between the first electroluminescent layer and the second electroluminescent layer, the electrode comprising;

an electron injection electrode layer in which a first conductive inorganic compound of which a work function is 4.2 eV or less is dispersed in a first pi-conjugated organic compound; and

a hole injection electrode layer in which a second conductive inorganic compound of which a work function is more than 4.2 eV is dispersed in a second pi-conjugated organic compound which is different from the first pi-conjugated organic compound,

wherein a weight ratio of the first conductive inorganic compound to the said first organic compound is more than ½ and

less than 4/1,

wherein a weight ratio of the second conductive inorganic compound to the said second organic compound is more than ½ and

less than 4/1, and

wherein the first conductive inorganic compound and the second conductive inorganic compound are selected from the group consisting of an inorganic nitride, an inorganic phosphide, an inorganic sulfide, an inorganic selenide, and an inorganic telluride.

14. The semiconductor device according to claim 13,

wherein a particle diameter of at least one of the first and second conductive inorganic compounds is 1 nm to 100 nm.

15. The semiconductor device according to claim 13,

wherein a conductivity of at least one of the first and second conductive inorganic compounds is 10^—

5 S/m or more.

16. The semiconductor device according to claim 13,

wherein the semiconductor device is one selected from the group consisting of a cellular phone, a personal computer, a monitor, a video camera, a digital camera, a goggle type display, a navigation system, audio components, a car audio system, a game machine, a mobile computer, a portable game machine, an electronic book, and an image reproducing device equipped with a recording medium.