Semiconductors bonded on glass substrates

• US 7,504,310 B2
• Filed: 07/26/2006
• Issued: 03/17/2009
• Est. Priority Date: 05/21/2003
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Forbes, Leonard
• Primary Examiner(s): Nhu; David
• Application Number:
  US11/493,128
• Publication Number:
  US 20060263994A1
• Time in Patent Office: 965 Days
• Field of Search: 438/311, 438/106, 438/113, 438/118, 438/197, 438/198, 438/199, 438/200, 438/381, 438/471, 438/473, 438/474, 438/475, 438/766, 438/767, 438/770
• US Class Current: 438/311
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78654 Monocrystalline silicon transistors
• CPC Class Codes: H01L 29/78657 SOS transistors

Abstract

A method includes providing a glass substrate and bonding a semiconductor layer to the glass substrate. The semiconductor layer is formed to a thickness such that it does not yield due to temperature-induced strain at device processing temperatures.

Claims

1. A method for making a semiconductor on insulator structure comprising:

providing a glass substrate; and

bonding a semiconductor layer to the glass substrate such that the semiconductor layer bonded to the glass substrate forms a semiconductor on insulator wafer for device processing, the semiconductor layer having a thickness such that the semiconductor layer does not yield due to temperature-induced strain at device processing temperatures.

2. The method for making a semiconductor on insulator structure according to claim 1, wherein bonding a semiconductor layer to the glass substrate includes forming the semiconductor on insulator wafer such that the thickness of the semiconductor layer is less than a thickness correlated to onset of yield for the semiconductor layer at a maximum temperature-induced strain of the semiconductor layer.

3. The method for making a semiconductor on insulator structure according to claim 1, wherein providing a glass substrate includes providing a substrate of glass material selected from a group consisting of fused silica, fused quartz, and a borosilicate glass.

4. The method for making a semiconductor on insulator structure according claim 1, wherein providing a glass substrate includes providing a borosilicate glass substrate.

5. The method for making a semiconductor on insulator structure according to claim 1, wherein bonding a semiconductor layer to the glass substrate includes bonding a silicon layer to the glass substrate.

6. The method for making a semiconductor on insulator structure according to claim 1, wherein providing a glass substrate includes:

providing a sheet of fused silica;

polishing the sheet of fused silica to generate a polished sheet of fused silica; and

cutting the polished sheet of fused silica into wafer size patterns.

7. The method for making a semiconductor on insulator structure according to claim 1, wherein bonding a semiconductor layer to the glass substrate includes bonding a monocrystalline semiconductor layer to the glass substrate.

8. A method for making a semiconductor on insulator structure comprising:

providing a glass substrate; and

performing a bonding cut process on a semiconductor wafer and the glass substrate to provide a semiconductor layer bonded to the glass substrate such that the semiconductor layer bonded to the glass substrate forms a semiconductor on insulator wafer for device processing, the semiconductor layer having a thickness such that the semiconductor layer does not yield due to temperature-induced strain at device processing temperatures.

9. The method for making a semiconductor on insulator structure according to claim 8, wherein performing a bonding cut process on a semiconductor wafer and the glass substrate includes forming the semiconductor on insulator wafer such that the thickness of the semiconductor layer is less than a thickness correlated to onset of yield for the semiconductor layer at a maximum temperature-induced strain of the semiconductor layer.

10. The method for making a semiconductor on insulator structure according to claim 8, wherein providing a glass substrate includes providing a fused silica substrate.

11. The method for making a semiconductor on insulator structure according to claim 8, wherein providing a glass substrate includes providing a polished glass substrate having a wafer size pattern.

12. The method for making a semiconductor on insulator structure according to claim 8, wherein performing a bonding cut process on the semiconductor wafer and the glass substrate to provide a semiconductor layer bonded to the glass substrate includes polishing an intermediate semiconductor layer provided by the bonding cut to thin the intermediate semiconductor layer.

13. The method for making a semiconductor on insulator structure according to claim 8, wherein performing a bonding cut process on a semiconductor wafer and the glass substrate includes performing a bonding cut process on a wafer containing silicon, the wafer having a silicon oxide layer on a surface of the wafer.

14. The method for making a semiconductor on insulator structure according to claim 8, wherein performing a bonding cut process on a semiconductor wafer and the glass substrate includes conditioning the semiconductor wafer prior to bonding the semiconductor wafer to the glass substrate.

15. The method for making a semiconductor on insulator structure according to claim 8, wherein conditioning the semiconductor wafer includes implanting hydrogen-containing ions in the semiconductor wafer.

16. The method for making a semiconductor on insulator structure according to claim 8, wherein the method includes raising a temperature of the semiconductor layer bonded to the glass substrate after performing the bonding cut process.

17. The method for making a semiconductor on insulator structure according to claim 8, wherein performing a bonding cut process on a semiconductor wafer and the glass substrate includes performing a bonding cut process on a wafer containing germanium.

18. The method for making a semiconductor on insulator structure according to claim 8, wherein performing a bonding cut process on a semiconductor wafer and the glass substrate to provide a semiconductor layer bonded to the glass substrate includes providing a monocrystalline semiconductor layer bonded to the glass substrate.

19. A method including manufacturing a semiconductor on insulator structure, the method comprising:

providing a glass substrate;

performing a bonding cut process on a semiconductor wafer and the glass substrate to provide a semiconductor layer bonded to the glass substrate, the semiconductor layer having a thickness such that the semiconductor layer does not yield due to temperature-induced strain at device processing temperatures; and

using a remaining semiconductor wafer resulting from the bonding cut to bond a second semiconductor layer to another glass substrate.

20. The method including manufacturing a semiconductor on insulator structure according to claim 19, wherein providing a glass substrate includes providing a substrate of glass material selected from a group consisting of fused silica, fused quartz, and a borosilicate glass.

21. The method including manufacturing a semiconductor on insulator structure according to claim 19, wherein providing a glass substrate includes providing a polished glass sheet and cutting the polished glass sheet into a wafer size pattern to form the glass substrate.

22. The method including manufacturing a semiconductor on insulator structure according to claim 19, wherein performing a bonding cut process on a semiconductor wafer and the glass substrate includes performing a bonding cut process on a wafer containing silicon and the glass substrate.

23. The method including manufacturing a semiconductor on insulator structure according to claim 19, wherein performing a bonding cut process on a semiconductor wafer and the glass substrate includes performing a bonding cut process on the glass substrate and a silicon-containing wafer, the silicon-containing wafer including an insulator layer.

24. The method including manufacturing a semiconductor on insulator structure according to claim 19, wherein using a remaining semiconductor wafer resulting from the bonding cut to bond a second semiconductor layer to another glass substrate includes providing a substrate of glass material selected from a group consisting of fused silica, fused quartz, and a borosilicate glass.

25. The method including manufacturing a semiconductor on insulator structure according to claim 19, wherein the method further includes forming electronic circuitry in the second semiconductor layer.

26. The method including manufacturing a semiconductor on insulator structure according to claim 19, wherein the method further includes forming electronic circuitry in the semiconductor layer bonded to the glass substrate.

27. The method including manufacturing a semiconductor on insulator structure according to claim 19, wherein performing a bonding cut process on a semiconductor wafer and the glass substrate includes:

conditioning the semiconductor wafer, prior to bonding the semiconductor wafer to the glass substrate, by subjecting a surface of the semiconductor wafer to implantation of ions to provide a conditioned semiconductor wafer;

bonding the conditioned semiconductor wafer to the glass substrate by plasma enhanced bonding;

raising a temperature of the conditioned semiconductor wafer bonded to the glass substrate to break off a portion of the semiconductor wafer; and

annealing the semiconductor layer bonded to the glass substrate.

28. The method including manufacturing a semiconductor on insulator structure according to claim 27, wherein conditioning the semiconductor wafer, prior to bonding the semiconductor wafer to the glass substrate, by subjecting a surface of the semiconductor wafer to implantation of ions includes conditioning a silicon wafer by subjecting a surface of the silicon wafer to implantation of hydrogen-containing ions.

29. The method including manufacturing a semiconductor on insulator structure according to claim 19, wherein performing a bonding cut process on a semiconductor wafer and the glass substrate to provide a semiconductor layer bonded to the glass substrate includes providing a monocrystalline semiconductor layer bonded to the glass substrate.