Manufacturing method of semiconductor device

• US 7,504,317 B2
• Filed: 11/16/2006
• Issued: 03/17/2009
• Est. Priority Date: 12/02/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsurume, Takuya, Aoki, Tomoyuki, Dairiki, Koji, Tamura, Tomoko
• Primary Examiner(s): Huynh; Andy
• Application Number:
  US11/600,070
• Publication Number:
  US 20070128833A1
• Time in Patent Office: 852 Days
• Field of Search: 438/460, 438/68, 438/113, 438/455, 438/458, 438/462, 438/464
• US Class Current: 438/460
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate

Abstract

It is an object to provide a manufacturing method of a semiconductor device with high reliability. A plurality of first semiconductor integrated circuits, a plurality of second semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, a plurality of third semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits and one of the second semiconductor integrated circuits, and a plurality of fourth semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, one of the second semiconductor integrated circuits, and one of the third semiconductor integrated circuits are formed over a first substrate. The first semiconductor integrated circuits are transferred to a second substrate. A first protective layer is formed to cover the first semiconductor integrated circuits and a surface of the second substrate in the periphery of the first semiconductor integrated circuits. The second substrate and the first protective layer are divided so that the plurality of the first semiconductor integrated circuits is divided into individual pieces and part of the second substrate remains in the periphery of the first semiconductor integrated circuits. Accordingly, a semiconductor device having the first semiconductor integrated circuit is manufactured.

Claims

1. A manufacturing method of a semiconductor device comprising:

forming a plurality of first semiconductor integrated circuits, and a plurality of second semiconductor integrated circuits arranged to surround at least one of the plurality of first semiconductor integrated circuits, over a first substrate;

adhering a second substrate to cover the plurality of first semiconductor integrated circuits and the plurality of second semiconductor integrated circuits;

separating the first substrate and the second substrate from each other by applying an external force between the first substrate and the second substrate;

transferring the plurality of first semiconductor integrated circuits to a third substrate;

removing the second substrate;

forming a protective layer to cover a top surface and a side surface of the plurality of first semiconductor integrated circuits and a surface of the third substrate in a periphery of the plurality of first semiconductor integrated circuits; and

dividing the third substrate and the protective layer so that the plurality of first semiconductor integrated circuits is divided into individual pieces and part of the third substrate remains in the periphery of the plurality of first semiconductor integrated circuits.

8. The manufacturing method of a semiconductor device according to any one of claims 1, 3, and 5, further comprising a step of forming a peeling layer between the first substrate and the plurality of first and second semiconductor integrated circuits.

13. The manufacturing method of a semiconductor device according to any one of claims 1 to 6, wherein a heat resistance of the first substrate is higher than that of the second substrate.

2. A manufacturing method of a semiconductor device comprising:

forming a plurality of first semiconductor integrated circuits, a plurality of second plurality of semiconductor integrated circuits each of which is arranged to be adjacent to one of the plurality of first semiconductor integrated circuits, a plurality of third semiconductor integrated circuits each of which is arranged to be adjacent to one of the plurality of first semiconductor integrated circuits and to one of the plurality of second semiconductor integrated circuits, and a plurality of fourth semiconductor integrated circuits each of which is arranged to be adjacent to one of the plurality of first semiconductor integrated circuits, to one of the plurality of second semiconductor integrated circuits, and to one of the plurality of third semiconductor integrated circuits, over a first substrate;

adhering a second substrate to cover the plurality of first semiconductor integrated circuits, the plurality of second semiconductor integrated circuits, the plurality of third semiconductor integrated circuits, and the plurality of fourth semiconductor integrated circuits;

separating the first substrate and the second substrate from each other by applying an external force between the first substrate and the second substrate;

transferring the plurality of first semiconductor integrated circuits to a third substrate;

removing the second substrate;

forming a protective layer to cover a top surface and a side surface of the plurality of first semiconductor integrated circuits and a surface of the third substrate in a periphery of the plurality of first semiconductor integrated circuits; and

dividing the third substrate and the protective layer so that the plurality of first semiconductor integrated circuits is divided into individual pieces and part of the third substrate remains in the periphery of the plurality of first semiconductor integrated circuits.

9. The manufacturing method of a semiconductor device according to any one of claims 2, 4, and 6, further comprising a step of forming a peeling layer between the first substrate and the first to the fourth plurality of semiconductor integrated circuits.

10. The manufacturing method of a semiconductor device according to any one of claims 2, 4, and 6, wherein the first to the fourth plurality of semiconductor integrated circuits are formed over the first substrate in a same step.

11. The manufacturing method of a semiconductor device according to any one of claims 2, 4, and 6, wherein at least two of the plurality of first to fourth semiconductor integrated circuits have a same configuration with each other.

12. The manufacturing method of a semiconductor device according to any one of claims 2, 4, and 6, wherein the plurality of first to fourth semiconductor integrated circuits have different configurations with each other.

3. A manufacturing method of a semiconductor device comprising:

forming a plurality of first semiconductor integrated circuits, and a plurality of second semiconductor integrated circuits arranged to surround at least one of the plurality of first semiconductor integrated circuits, over a first substrate,

forming a first insulating layer to cover the plurality of second semiconductor integrated circuits;

forming a second insulating layer to cover the plurality of first semiconductor integrated circuits;

adhering a second substrate to cover the first insulating layer and the second insulating layer;

separating the first substrate and the second substrate from each other by applying an external force between the first substrate and the second substrate;

transferring the plurality of first semiconductor integrated circuits to a third substrate;

removing the second substrate;

forming a protective layer to cover a top surface and a side surface of the plurality of first semiconductor integrated circuits and a surface of the third substrate in a periphery of the plurality of first semiconductor integrated circuits; and

dividing the third substrate and the protective layer so that the plurality of first semiconductor integrated circuits is divided into individual pieces and part of the third substrate remains in the periphery of the plurality of first semiconductor integrated circuits.

7. The manufacturing method of a semiconductor device according to any one of claims 3 to 6, wherein the second insulating layer is formed using a resin material containing an epoxy group, and the first insulating layer is formed using a resin material containing a vinyl group.

4. A manufacturing method of a semiconductor device comprising:

forming a plurality of first semiconductor integrated circuits, a plurality of second semiconductor integrated circuits each of which is arranged to be adjacent to one of the plurality of first semiconductor integrated circuits, a plurality of third semiconductor integrated circuits each of which is arranged to be adjacent to one of the plurality of first semiconductor integrated circuits and to one of the plurality of second semiconductor integrated circuits, and a plurality of fourth semiconductor integrated circuits each of which is arranged to be adjacent to one of the plurality of first semiconductor integrated circuits, to one of the plurality of second semiconductor integrated circuits, and to one of the plurality of third semiconductor integrated circuits, over a first substrate;

forming a first insulating layer to cover the plurality of second semiconductor integrated circuits, the plurality of third semiconductor integrated circuits, and the plurality of fourth semiconductor integrated circuits;

forming a second insulating layer to cover the plurality of first semiconductor integrated circuits;

adhering a second substrate to cover the first insulating layer and the second insulating layer;

separating the first substrate and the second substrate from each other by applying an external force between the first substrate and the second substrate;

transferring the plurality of first semiconductor integrated circuits to a third substrate;

removing the second substrate;

forming a protective layer to cover a top surface and a side surface of the plurality of first semiconductor integrated circuits and a surface of the third substrate in a periphery of the plurality of first semiconductor integrated circuits; and

dividing the third substrate and the protective layer so that the plurality of first semiconductor integrated circuits is divided into individual pieces and part of the third substrate remains in the periphery of the plurality of first semiconductor integrated circuits.

5. A manufacturing method of a semiconductor device comprising:

forming a plurality of first semiconductor integrated circuits, and a plurality of second semiconductor integrated circuits arranged to surround at least one of the plurality of first semiconductor integrated circuits;

forming a first insulating layer to cover the plurality of second semiconductor integrated circuits;

forming a second insulating layer to cover the plurality of first semiconductor integrated circuits;

adhering a second substrate to cover the first insulating layer and the second insulating layer;

separating the first substrate and the second substrate from each other by applying an external force between the first substrate and the second substrate;

transferring the plurality of first semiconductor integrated circuits to a third substrate;

removing the second substrate;

forming a protective layer to cover a top surface and a side surface of the plurality of first semiconductor integrated circuits and a surface of the third substrate in a periphery of the plurality of first semiconductor integrated circuits; and

dividing the third substrate and the protective layer so that the plurality of first semiconductor integrated circuits is divided into individual pieces and part of the third substrate remains in the periphery of the plurality of first semiconductor integrated circuits,

wherein, with respect to the external force, an adhesive strength between the second insulating layer and the plurality of first semiconductor integrated circuits is higher than an adhesive strength between the first insulating layer and the plurality of second semiconductor integrated circuits, and is higher than a junction strength between the first substrate and the plurality of first semiconductor integrated circuits, and

wherein, with respect to the external force, a junction strength between the first substrate and the plurality of second semiconductor integrated circuits is higher than an adhesive strength between the first insulating layer and the plurality of second semiconductor integrated circuits.

6. A manufacturing method of a semiconductor device comprising:

forming a plurality of first semiconductor integrated circuits, a plurality of second semiconductor integrated circuits each of which is arranged to be adjacent to one of the plurality of first semiconductor integrated circuits, a plurality of third semiconductor integrated circuits each of which is arranged to be adjacent to one of the plurality of first semiconductor integrated circuits and to one of the plurality of second semiconductor integrated circuits, and a plurality of fourth semiconductor integrated circuits each of which is arranged to be adjacent to one of the plurality of first semiconductor integrated circuits, to one of the plurality of second semiconductor integrated circuits, and to one of the plurality of third semiconductor integrated circuits, over a first substrate;

forming a first insulating layer to cover the plurality of second semiconductor integrated circuits, the plurality of third semiconductor integrated circuits, and the plurality of fourth semiconductor integrated circuits;

forming a second insulating layer to cover the plurality of first semiconductor integrated circuits;

adhering a second substrate to cover the first insulating layer and the second insulating layer;

separating the first substrate and the second substrate from each other by applying an external force between the first substrate and the second substrate;

transferring the plurality of first semiconductor integrated circuits to a third substrate;

removing the second substrate;

forming a protective layer to cover a top surface and a side surface of the plurality of first semiconductor integrated circuits and a surface of the third substrate in a periphery of the plurality of first semiconductor integrated circuits; and

dividing the third substrate and the protective layer so that the plurality of first semiconductor integrated circuits is divided into individual pieces and part of the third substrate remains in the periphery of the plurality of first semiconductor integrated circuits,

wherein, with respect to the external force, an adhesive strength between the second insulating layer and the plurality of first semiconductor integrated circuits is higher than an adhesive strength between the first insulating layer and each of the plurality of second semiconductor integrated circuits to the plurality of fourth semiconductor integrated circuits, and is higher than a junction strength between the first substrate and the plurality of first semiconductor integrated circuits, and

wherein, with respect to the external force, a junction strength between the first substrate and each of the plurality of second semiconductor integrated circuits to the fourth semiconductor integrated circuits is higher than an adhesive strength between the first insulating layer and each of the plurality of second semiconductor integrated circuits to the plurality of fourth semiconductor integrated circuits.