Light emitting devices

• US 7,504,669 B2
• Filed: 07/13/2007
• Issued: 03/17/2009
• Est. Priority Date: 04/15/2003
• Status: Expired due to Fees

• Current Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Original Assignee: Luminus Devices Incorporated (Sanan Optoelectronics Company Limited)
• Inventors: Erchak, Alexei A., Lidorikis, Elefterios, Luo, Chiyan
• Primary Examiner(s): Pert; Evan
• Assistant Examiner(s): Wilson; Scott R
• Application Number:
  US11/879,035
• Publication Number:
  US 20080017874A1
• Time in Patent Office: 613 Days
• Field of Search: 257/79, 257/86, 257/87, 257/98, 257/100, 257/103, 257/E25.032, 257/E51.022, 438/22, 438/25, 438/26, 438/27, 438/29
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 5/11 Comprising a photonic bandgap structure

Abstract

Light-emitting devices, and related components, systems and methods are disclosed.

Claims

1. A light emitting device comprising:

a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region;

a photonic crystal structure formed in an n-type region; and

a reflector;

wherein the p-type region is substantially planar and the photonic crystal structure does not extend into the p-type region; and

wherein the reflector and the photonic crystal structure are disposed on opposite sides of the active region.

2. The device of claim 1 wherein the photonic crystal structure comprises a periodic variation in a thickness of the n-type region.

3. The device of claim 1 wherein the photonic crystal structure comprises a planar lattice of holes.

4. The device of claim 3 wherein the lattice has a lattice constant a between about 0.1λ

and about 10λ

, where λ

is a wavelength of light emitted by the active region.

5. The device of claim 3 wherein the lattice has a lattice constant a and the holes have a diameter between about 0.1 a and about 0.5 a.

6. The device of claim 3 wherein the holes have a depth between about 0.05λ

and about 5λ

, where λ

is a wavelength of light emitted by the active region.

7. The device of claim 3 wherein a lattice type, lattice constant, hole diameter, and hole depth are selected to create a predetermined radiation pattern.

8. The device of claim 3 wherein a lattice type, lattice constant, hole diameter, and hole depth are selected to create a radiation pattern having a maximum in power emitted in a direction substantially perpendicular to a surface of the semiconductor structure.

9. The device of claim 3 wherein a lattice type, lattice constant, hole diameter, and hole depth are selected such that at least 50% of total power emitted from the device is emitted in a 45°

cone centered about an axis perpendicular to a surface of the device.

10. The device of claim 3 wherein a lattice type, lattice constant, hole diameter, and hole depth are selected such that at least 25% of total power emitted from the device is emitted in a 30°

cone centered about an axis perpendicular to a surface of the device.

11. A light emitting device comprising:

a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region;

a surface of an n-type region having a dielectric function that varies spatially according to a pattern, wherein the pattern does not extend beyond the n-type region; and

a reflector;

wherein the reflector and the surface of an n-type region having a dielectric function that varies spatially according to a pattern are disposed on opposite sides of the light-generating region.

12. The device of claim 11, wherein the p-type region is substantially planar.

13. A light emitting device comprising:

a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region;

a photonic lattice formed in an n-type region, wherein the photonic lattice does not extend beyond the n-type region; and

a reflector;

wherein the reflector and the photonic lattice are disposed on opposite sides of the light-generating region.

14. The device of claim 13, wherein the p-type region is substantially planar.

15. A light emitting device comprising:

a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region;

a surface of an n-type region having a dielectric function that varies spatially according to a pattern, wherein the pattern does not extend into the p-type region; and

a reflector;

wherein the reflector and the surface of an n-type region having a dielectric function that varies spatially according to a pattern are disposed on opposite sides of the light-generating region.

16. A light emitting device comprising:

a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region;

a photonic lattice formed in an n-type region, wherein the photonic lattice does not extend into the p-type region; and

a reflector;

wherein the reflector and the photonic lattice are disposed on opposite sides of the light-generating region.

17. A light emitting device comprising:

a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region;

a surface of an n-type region having a dielectric function that varies spatially according to a pattern, wherein the p-type region is substantially planar and the pattern does not extend into the p-type region; and

a reflector;

wherein the reflector and the surface of an n-type region having a dielectric function that varies spatially according to a pattern are disposed on opposite sides of the light-generating region.

18. A light emitting device comprising:

a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region;

a photonic lattice formed in an n-type region, and

a reflector;

wherein the p-type region is substantially planar and the photonic lattice does not extend into the p-type region, and

wherein the reflector and the photonic lattice are disposed on opposite sides of the light-generating region.

19. A light emitting device comprising:

a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region; and

a surface of an n-type region having a dielectric function that varies spatially according to a pattern, wherein the pattern does not extend beyond the light-generating region

a reflector;

wherein the reflector and the surface of an n-type region having a dielectric function that varies spatially according to a pattern are disposed on opposite sides of the light-generating region.

20. The device of claim 19, wherein the p-type region is substantially planar.

21. A light emitting device comprising:

a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region;

a photonic lattice formed in an n-type region, wherein the photonic lattice does not extend beyond the light-generating region; and

a reflector;

wherein the reflector and the photonic lattice are disposed on opposite sides of the light-generating region.

22. The device of claim 21, wherein the p-type region is substantially planar.

23. A light emitting device comprising:

a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region;

a photonic lattice formed in an n-type region, wherein the photonic lattice is formed of a pattern of holes extending from a surface of the n-type region; and

a reflector;

wherein the reflector and the photonic lattice are disposed on opposite sides of the light-generating region.

24. The device of claim 23, wherein the holes do not extend beyond the n-type region.

25. The device of claim 23, wherein the surface of the n-type region is substantially flat.