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Systems involving spin-transfer magnetic random access memory

  • US 7,505,308 B1
  • Filed: 05/09/2008
  • Issued: 03/17/2009
  • Est. Priority Date: 05/09/2008
  • Status: Active Grant
First Claim
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1. A magnetic random access memory system comprising:

  • a spin-current generating portion including;

    a ferromagnetic film layer; and

    a conductance layer;

    a first write portion in electrical contact with the ferromagnetic film including a selection device;

    a first read portion in electrical contact with the conductance layer including;

    a free layer magnet;

    a read non-magnetic layer; and

    a reference layer;

    a second write portion in electrical contact with the ferromagnetic film; and

    a second read portion in electrical contact with the conductance layer.

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