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Antenna diversity switch of wireless dual-mode co-existence systems

  • US 7,505,790 B2
  • Filed: 06/07/2005
  • Issued: 03/17/2009
  • Est. Priority Date: 06/07/2005
  • Status: Active Grant
First Claim
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1. An antenna diversity switch being a monolithic microwave integrated circuit (MMIC), using only six transistor controllers to achieve a double-pole-three-throw switch and having a function of antenna diversity for dual-mode co-existence system, used for receiving and transmitting a first RF signal and a second RF signal, comprising:

  • a first transmitting port, used as a transmitting port of a RF transceiver and used for providing a first input signal of the antenna diversity switch;

    a second transmitting port, used as another transmitting port of the RF transceiver and used for providing a second input signal of the antenna diversity switch;

    a receiving port, used for providing an output signal of the antenna diversity switch;

    a first control unit, electrically connected between the first transmitting port and a first antenna;

    a second control unit, electrically connected between the first transmitting port and a second antenna;

    a third control unit, electrically connected between the second transmitting port and the first antenna;

    a fourth control unit, electrically connected between the second transmitting port and the second antenna;

    a fifth control unit, electrically connected between the receiving port and the first antenna;

    a sixth control unit, electrically connected between the receiving port and the second antenna;

    wherein the first control unit, the second control unit, the third control unit, the fourth control unit, the fifth control unit and the sixth control unit all use Pseudomorphic High Electronic Mobility Transistor (PHEMT), where each source node and each drain node of the PHEMT are connected to the adjacent circuits and each gate of the PHEMT is connected to a control voltage to determine the on/off state of each transistor; and

    the first control unit, the second control unit, the third control unit, the fourth control unit, the fifth control unit and the sixth control unit are fabricated on a single semiconductor substrate.

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