Ambipolar organic thin-film field-effect transistor and making method

• US 7,507,613 B2
• Filed: 08/01/2007
• Issued: 03/24/2009
• Est. Priority Date: 03/25/2005
• Status: Expired due to Fees

• Current Assignee: Osaka University, Shin-Etsu Chemical Company Limited
• Original Assignee: Osaka University, Shin-Etsu Chemical Company Limited
• Inventors: Kawai, Tomoji, Taniguchi, Masateru, Fukui, Ikuo, Mizuno, Eriko
• Primary Examiner(s): Dang; Phuc T
• Application Number:
  US11/882,434
• Publication Number:
  US 20070281412A1
• Time in Patent Office: 601 Days
• Field of Search: 438/149, 438/761, 257/192, 257/E21.409
• US Class Current: 438/149
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/471 the gate dielectric comprising only organic materials
• CPC Class Codes: H10K 85/311 Phthalocyanine

Abstract

In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

Claims

1. A method for preparing an ambipolar organic thin-film field-effect transistor, comprising the steps of:

applying a solution of an organic solvent-soluble organic compound in an organic solvent onto a gate electrode,

drying the applied solution to form an insulator layer,

laying a semiconductor layer on the insulator layer, and

conducting polling by applying a voltage which is not less than the coercive electric field and not more than the withstand voltage of the organic compound of the insulator layer between source and gate electrodes thereby inverting polarity from p-type transistor characteristics to n-type transistor characteristics.

2. The method as recited in claim 1, wherein the organic compound in the material of which the insulator layer is made exhibits spontaneous polarization similar to ferroelectric material.

3. The method as recited in claim 1, wherein the organic compound of which the insulator layer is made is a polymer having a weight average molecular weight of 2,500 to 1,000,000.

4. The method as recited in claim 1, wherein the organic compound of which the insulator layer is made is an insulating polymer having cyano groups.

5. The method as recited in claim 1, wherein the organic compound of which the insulator layer is made is an insulating polymer having cyanoethyl groups.

6. The method as recited in claim 1, wherein the organic compound of which the insulator layer is made is cyanoethylpullulan.

8. The method as recited in claim 1, wherein the material of which the semiconductor layer is made comprises an organic compound.

9. The method as recited in claim 1, wherein the organic compound in the insulator layer-forming material has a high withstand voltage and a high dielectric constant.

10. The method as recited in claim 1, wherein the organic compound of which the insulator layer is made is an insulating polymer having cyano groups with a percent substitution with cyano groups of at least 80 mol%.

11. The method as recited in claim 1, wherein organic compounds for forming the semiconductor layer include low molecular weight compounds such as pentacene, metal phthalocyanine such as copper phthalocyanine and iron phthalocyanme, and α

-sexithienyl; and

high molecular weight compounds such as polythiophenes, polypyrroles, polyanilines, polyacetylenes, poly(thienylene vinylene)s, and poly(phenylene vinylene)s.

12. The method as recited in claim 1, wherein said step of laying a semiconductor layer is a deposition technique such as vacuum evaporation or a solution coating/drying process.

13. The method as recited in claim 1, wherein a solution of the insulator layer-forming material in the organic solvent is coated by spin coating, screen printing or ink jet printing.

14. The method as recited in claim 1, wherein the insulator layer has a thickness of 0.2 to 10 μ

m.

15. The method as recited in claim 1, wherein the semiconductor layer has a thickness of 50 to 300 nm.

16. The method as recited in claim 1, wherein the insulator layer has a thickness of 0.5 to 3 μ

m.

17. The method as recited in claim 1, wherein the semiconductor layer has a thickness of 50 to 100 nm.

7. A method for preparing an ambipolar organic thin-film field-effect transistor, comprising the steps of:

applying a solution of an organic solvent-soluble organic compound in an organic solvent onto a gate electrode,

drying the applied solution to form an insulator layer, and

laying a semiconductor layer on the insulator layer,

said organic compound of which the insulator layer is made having a withstand voltage of at least 1 MV/cm, a coercive electric field of at least 50 kV/cm, and a spontaneous polarization Pr of at least 1.5 μ

C/cm².