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Device manufacturing method and device

  • US 7,507,675 B2
  • Filed: 06/24/2004
  • Issued: 03/24/2009
  • Est. Priority Date: 06/25/2003
  • Status: Expired due to Fees
First Claim
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1. A device manufacturing method comprising:

  • (a) providing a polished silicon substrate having a background portion and one or more target portions, said background and target portions having Si—

    H bonds on the surface;

    (b) irradiating said one or more target portions using a patterned beam of radiation and in the presence of oxygen to provide a layer of silicon oxide on said target portion(s);

    (c) reacting at least a part of said background portion with a first composition comprising one or more compounds selected from 1-alkenes and 1-alkynes;

    (d) removing said layer of silicon oxide from said target portion(s);

    (e) reacting one or more target portions with a further composition comprising one or more compounds selected from 1-alkenes and 1-alkynes, to covalently attach said one or more compounds to said target portion(s).

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