Device manufacturing method and device
First Claim
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1. A device manufacturing method comprising:
- (a) providing a polished silicon substrate having a background portion and one or more target portions, said background and target portions having Si—
H bonds on the surface;
(b) irradiating said one or more target portions using a patterned beam of radiation and in the presence of oxygen to provide a layer of silicon oxide on said target portion(s);
(c) reacting at least a part of said background portion with a first composition comprising one or more compounds selected from 1-alkenes and 1-alkynes;
(d) removing said layer of silicon oxide from said target portion(s);
(e) reacting one or more target portions with a further composition comprising one or more compounds selected from 1-alkenes and 1-alkynes, to covalently attach said one or more compounds to said target portion(s).
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Abstract
A method for patterning a polished silicon surface is disclosed, the method including steps leading to an organic monolayer on at least a part of the silicon surface, the monolayer being functionalized in specific desired locations. The method can be used to produce a device comprising one or more FET structures, the gate of the FET being formed by the functionalized organic monolayer. The functionalized monolayer preferably contains oligosaccharides or oligopeptides which are capable of interacting with biological substance, such that the device acts as a bio-sensor.
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Citations
13 Claims
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1. A device manufacturing method comprising:
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(a) providing a polished silicon substrate having a background portion and one or more target portions, said background and target portions having Si—
H bonds on the surface;(b) irradiating said one or more target portions using a patterned beam of radiation and in the presence of oxygen to provide a layer of silicon oxide on said target portion(s); (c) reacting at least a part of said background portion with a first composition comprising one or more compounds selected from 1-alkenes and 1-alkynes; (d) removing said layer of silicon oxide from said target portion(s); (e) reacting one or more target portions with a further composition comprising one or more compounds selected from 1-alkenes and 1-alkynes, to covalently attach said one or more compounds to said target portion(s). - View Dependent Claims (2, 3, 7, 8, 9, 10, 11, 12, 13)
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4. A device manufacturing method comprising:
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(a1) providing a polished silicon substrate having a background portion and one or more target portions, said background and target portions having Si—
H bonds on the surface;(b1) reacting one or more target portions with a composition comprising one or more compounds selected from 1-alkenes and 1-alkynes, to covalently attach said one or more compounds to said target portion(s); and (c1) subsequent to reacting the one or more target portions, reacting at least a part of said background portion with a first composition comprising one or more compounds selected from 1-alkenes and 1-alkynes. - View Dependent Claims (5, 6)
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Specification