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Semiconductor device with diamond-like carbon film on backside of substrate

  • US 7,508,033 B2
  • Filed: 09/08/2003
  • Issued: 03/24/2009
  • Est. Priority Date: 04/24/1998
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a thin film transistor formed on a first insulating surface of a substrate;

    a diamond-like carbon film formed on a second insulating surface of the substrate;

    a wiring electrically connected to the thin film transistor; and

    a pixel electrode formed over the wiring,wherein the first insulating surface is opposite to the second insulating surface.

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