Semiconductor device with diamond-like carbon film on backside of substrate
First Claim
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1. A semiconductor device, comprising:
- a thin film transistor formed on a first insulating surface of a substrate;
a diamond-like carbon film formed on a second insulating surface of the substrate;
a wiring electrically connected to the thin film transistor; and
a pixel electrode formed over the wiring,wherein the first insulating surface is opposite to the second insulating surface.
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Abstract
There is provided a highly reliable semiconductor device in which electrostatic breakdown can be prevented. A diamond-like carbon (DLC) film is formed on a surface of an insulating substrate, and thereafter, a thin film transistor is formed on the insulating substrate. This DLC film allows charges of static electricity to flow and can prevent electrostatic breakdown of the thin film transistor.
97 Citations
19 Claims
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1. A semiconductor device, comprising:
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a thin film transistor formed on a first insulating surface of a substrate; a diamond-like carbon film formed on a second insulating surface of the substrate; a wiring electrically connected to the thin film transistor; and a pixel electrode formed over the wiring, wherein the first insulating surface is opposite to the second insulating surface. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An electronic device comprising:
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a thin film transistor formed on a first insulating surface of the substrate; a diamond-like carbon film formed on a second insulating surface of the substrate; a wiring electrically connected to the thin film transister; and a pixel electrode formed over the wiring, wherein the first insulating surface is opposite to the second insulating surface. - View Dependent Claims (9, 10, 11)
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12. A semiconductor device, comprising:
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a diamond-like carbon film; a substrate over the diamond like carbon film; and a logic circuit comprising a transistor formed over the substrate. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification