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Operating non-volatile memory with boost structures

  • US 7,508,710 B2
  • Filed: 11/13/2006
  • Issued: 03/24/2009
  • Est. Priority Date: 11/13/2006
  • Status: Active Grant
First Claim
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1. A method for programming non-volatile storage, comprising:

  • configuring a NAND string to receive a boost voltage, the NAND string comprising a plurality of storage elements, the NAND string formed, at least in part, on a substrate, a boost structure extending along the NAND string; and

    applying the boost voltage to a first end of the NAND string, the boost voltage reaches the boost structure via a location along the NAND string at which the boost structure contacts the substrate.

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