Method for producing a luminescence diode chip

• US 7,510,890 B2
• Filed: 11/01/2004
• Issued: 03/31/2009
• Est. Priority Date: 10/31/2003
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Brunner, Herbert, Ott, Hubert, Grötsch, Stefan
• Primary Examiner(s): Chen; Jack
• Assistant Examiner(s): REAMES, MATTHEW L
• Application Number:
  US10/979,359
• Publication Number:
  US 20050148110A1
• Time in Patent Office: 1,611 Days
• Field of Search: 438/29, 438/31, 438/32
• US Class Current: 438/29
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

A method for producing a luminescence diode chip, in which provision is made of a semiconductor body is provided having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, a large part of said electromagnetic radiation being coupled out via the radiation coupling-out area. A luminescence conversion material is arranged downstream of the radiation coupling-out area in an emission direction of the semiconductor body. A radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas. The covering body is applied to the radiation coupling-out area of the semiconductor layer sequence in such a way that the first main area faces the radiation coupling-out area. The application of the covering body is preceded by the application of a first conversion layer, having a luminescence conversion material, to the first main area of the covering body.

Claims

1. A method for producing a luminescence diode chip, comprising:

providing a semiconductor body having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, which electromagnetic radiation, at least in part, is coupled out via the radiation coupling-out area;

providing a radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas; and

applying the covering body to the radiation coupling-out area such that the first main area faces the radiation coupling-out area, the application of the covering body being preceded by the application of a first conversion layer, having a luminescence conversion material, to at least one of the first and second main areas of the covering body,

wherein the step of applying the covering body includes adhesively bonding the covering body onto the radiation coupling-out area using a separate adhesive layer, which is different from the first conversion layer.

2. The method as claimed in claim 1, in which, before the covering body is applied to the radiation coupling-out area, the color locus (CIE chromaticity diagram) of the luminescence diode chip is determined and then a desired color locus of the luminescence diode chip is set by correspondingly choosing at least one of a quantity and a composition of the luminescence conversion material contained in the first conversion layer.

3. The method as claimed in claim 1, in which, before the covering body is applied to the radiation coupling-out area, a second conversion layer, having a luminescence conversion material, is applied to the radiation coupling-out area of the semiconductor layer sequence.

4. The method as claimed in claim 1, in which the adhesive layer is arranged between the radiation coupling-out area of the semiconductor body and the first main area of the covering body.

5. The method as claimed in claim 1, in which the covering body is formed as a radiation-shaping optical element.

6. The method as claimed in claim 5, in which the covering body is formed as a covering plate whose side areas, at least in part, do not run perpendicular to a main plane of extent of the covering plate.

7. The method as claimed in claim 5, in which the side areas of the covering body are formed in essentially parabolically, hyperbolically or elliptically curved fashion.

8. The method as claimed in claim 5, in which the covering body is a CPC-, CEC- or CHC-like optical concentrator, the first main area of the covering body being the actual concentrator output, so that radiation, compared with the customary application of a concentrator for focusing, passes through the latter in the opposite direction and is thus not concentrated, but rather leaves the covering body with reduced divergence through the second main area.

9. The method as claimed in claim 5, in which the second main area of the covering body, at least in part, is curved or structured in the manner of a refractive or diffractive lens.

10. The method as claimed in claim 5, in which the covering body is provided with holographic structures or elements.

11. The method as claimed in claim 1, in which the side areas of the covering body, at least in part, are provided with a layer sequence, which is reflective with respect to a radiation emitted by the luminescence diode chip during the operation thereof.

12. The method as claimed in claim 1, in which the covering body is produced from a material admixed with a luminescence conversion material.

13. The method as claimed in claim 1, in which the covering body is essentially formed from a material whose expansion coefficient essentially corresponds to the expansion coefficient of a material of the semiconductor layer sequence.

14. The method as claimed in claim 1, in which the covering body is formed from a material which essentially comprises a borosilicate glass.

15. The method as claimed in claim 1, in which the luminescence diode chip is formed as a thin-film luminescence diode chip.

16. The method as claimed in claim 1, in which the luminescence diode chip is provided for flip-chip mounting.

17. The luminescence diode chip as claimed in claim 1, in which the adhesive layer is silicone-based.