Method of making an encapsulated plasma sensitive device
First Claim
1. A method of making an encapsulated plasma sensitive device comprising:
- providing a plasma sensitive device adjacent to a substrate;
depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes; and
depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by a plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer.
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Abstract
A method of making an encapsulated plasma sensitive device. The method comprises: providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes, or modified sputtering processes; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by the plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. An encapsulated plasma sensitive device is also described.
330 Citations
26 Claims
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1. A method of making an encapsulated plasma sensitive device comprising:
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providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by a plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of making an encapsulated plasma sensitive device comprising:
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providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a modified sputtering process selected from providing a screen between a target cathode and the plasma sensitive device, applying off-axis sputtering, reducing a time of exposure of the plasma sensitive device to a plasma, reducing the energy of a plasma, or combinations thereof; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by a plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. - View Dependent Claims (12, 13, 14, 15)
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16. A method of making an encapsulated plasma sensitive device comprising:
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providing a plasma sensitive device adjacent to a substrate; depositing a plasma protective layer on the plasma sensitive device using a process selected from non-plasma based processes, or modified sputtering processes, the plasma protective layer being made of a dielectric material; and depositing at least one barrier stack adjacent to the plasma protective layer, the at least one barrier stack comprising at least one decoupling layer and at least one barrier layer, the plasma sensitive device being encapsulated between the substrate and the at least one barrier stack, wherein the decoupling layer, the barrier layer, or both are deposited using a plasma process, the encapsulated plasma sensitive device having a reduced amount of damage caused by a plasma compared to an encapsulated plasma sensitive device made without the plasma protective layer. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification