Method for manufacturing semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an element layer including a plurality of integrated circuits over one surface of a substrate;
forming a hole having curvature in part of the one surface side of the substrate;
thinning the substrate;
forming a laminated body including an integrated circuit by cutting off the substrate so that a cross section of the substrate has curvature corresponding to a portion where the hole is formed.
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Abstract
It is an object of the present invention to provide a method for manufacturing a semiconductor device, which is flexible and superiority in physical strength. As a method for manufacturing a semiconductor device, an element layer including a plurality of integrated circuits is formed over one surface of a substrate; a hole having curvature is formed in part of one surface side of the substrate; the substrate is thinned (for example, the other surface of the substrate is ground and polished); and the substrate is cut off so that a cross section of the substrate has curvature corresponding to a portion where the hole is formed; whereby a laminated body including an integrated circuit is formed. Further, a thickness of the substrate, which is polished, is 2 μm or more and 50 μm or less.
36 Citations
31 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an element layer including a plurality of integrated circuits over one surface of a substrate; forming a hole having curvature in part of the one surface side of the substrate; thinning the substrate; forming a laminated body including an integrated circuit by cutting off the substrate so that a cross section of the substrate has curvature corresponding to a portion where the hole is formed. - View Dependent Claims (18, 25)
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2. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an element layer including a plurality of integrated circuits over one surface of a substrate; forming a hole having curvature in part of the one surface side of the substrate; grinding the other surface of the substrate; polishing the other surface of the substrate after grinding the other surface of the substrate; and forming a laminated body including an integrated circuit by cutting off the substrate so that a cross section of the substrate has curvature corresponding to a portion where the hole is formed. - View Dependent Claims (12, 19, 26)
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3. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an element layer including a plurality of integrated circuits over one surface of a, substrate; forming a hole having curvature in the element layer so that part of the substrate is exposed; grinding the other surface of the substrate; polishing the other surface of the substrate after grinding the other surface of the substrate; and forming a laminated body including an integrated circuit by cutting off the substrate so that a cross section of the substrate has curvature corresponding to a portion where the hole is formed. - View Dependent Claims (13, 20, 27)
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4. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an element layer including a plurality of integrated circuits over one surface of a substrate; forming a hole having curvature in part of one surface side of the substrate by laser irradiation from a top surface of the element layer; grinding the other surface of the substrate; polishing the other surface of the substrate after grinding the other surface of the substrate; and forming a laminated body including an integrated circuit by cutting off the substrate so that a cross section of the substrate has curvature, which is polished, corresponding to a portion where the hole is formed. - View Dependent Claims (8, 14, 21, 28)
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5. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an element layer including a plurality of integrated circuits over one surface of a substrate; forming a hole having curvature in part of one surface side of the substrate; grinding the other surface of the substrate; polishing the other surface of the substrate after grinding the other surface of the substrate; and forming a laminated body including an integrated circuit by cutting off the substrate so that a cross section of the substrate has curvature by laser irradiation from the other surface of the substrate, which is polished, corresponding to a portion where the hole is formed. - View Dependent Claims (9, 15, 22, 29)
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6. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an element layer including a plurality of integrated circuits over one surface of a substrate; forming a hole having curvature in part of one surface side of the substrate by laser irradiation from a top surface of the element layer; grinding the other surface of the substrate; polishing the other surface of the substrate after grinding the other surface of the substrate; and forming a laminated body including an integrated circuit by cutting off the substrate so that a cross section of the substrate has curvature by laser irradiation from the other surface of the substrate, which is polished, corresponding to a portion where the hole is formed. - View Dependent Claims (10, 16, 23, 30)
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7. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an element layer including a plurality of integrated circuits over one surface of a substrate; forming a hole having curvature in part of one surface side of the substrate by laser irradiation from a top surface of the element layer; grinding the other surface of the substrate; polishing the other surface of the substrate after grinding the other surface of the substrate; forming a laminated body including an integrated circuit by cutting off the substrate so that a cross section of the substrate has curvature by laser irradiation from the other surface of the substrate, which is polished, corresponding to a portion where the hole is formed; and sealing both sides of the laminated body with two films having flexibility. - View Dependent Claims (11, 17, 24, 31)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsTsurume, Takuya, Kusumoto, Naoto
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Primary Examiner(s)Thai; Luan C
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Application NumberUS11/454,878Publication NumberTime in Patent Office1,016 DaysField of Search438/462, 438/460, 438/463, 438/464, 438/465, 438/459, 235/492US Class Current438/462CPC Class CodesG06K 19/07749 the record carrier being ca...
