Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same

• US 7,511,311 B2
• Filed: 08/01/2003
• Issued: 03/31/2009
• Est. Priority Date: 08/01/2002
• Status: Expired due to Term

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Sakamoto, Takahiko, Kususe, Takeshi
• Primary Examiner(s): Smith; Zandra
• Assistant Examiner(s): Patton; Paul E
• Application Number:
  US10/522,887
• Publication Number:
  US 20060231852A1
• Time in Patent Office: 2,069 Days
• Field of Search: 257/90, 257/91, 257/94, 257/95, 257/96, 257/97, 257/98, 257/81, 257/99, 257/88, 257/79, 438/22, 438/26, 438/28, 438/29, 438 33- 40, 438/42, 438/43, 438 45- 47, 362/612, 362/545, 362/800
• US Class Current: 257/95
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45169 Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 27/156 : two-dimensional arrays
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01021 : Scandium [Sc]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01059 : Praseodymium [Pr]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01063 : Europium [Eu]
• CPC Class Codes: H01L 2924/01065 : Terbium [Tb]
• CPC Class Codes: H01L 2924/01066 : Dysprosium [Dy]
• CPC Class Codes: H01L 2924/01067 : Holmium [Ho]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/0107 : Ytterbium [Yb]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/10336 : Aluminium gallium arsenide [AlGaAs]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/20751 : larger or equal to 10 microns less than 20 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20754 : larger or equal to 40 microns less than 50 microns
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/20756 : larger or equal to 60 microns less than 70 microns
• CPC Class Codes: H01L 2924/20757 : larger or equal to 70 microns less than 80 microns
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/08 : with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/60 : Reflective elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

Claims

1. A semiconductor light-emitting device comprising a structured portion including a first conductivity type layer;

a second conductivity type layer; and

a luminescent layer between the first and second conductivity type layers,

wherein an upper surface of the structured portion has a smaller width than a lower surface of the structured portion in sectional view, and the structured portion has inclined side surfaces, and

wherein the inclined side surfces of the structured portion are defined by first side surfaces and second side surfaces, a width of each of the first side surfaces increases from a lower surface side to an upper surface side, and a width of each of the second side surfaces increases from the upper surface side to the lower surface side.

2. The semiconductor light-emitting device according to claim 1, wherein the first side surfaces are formed in corners of the structured portion.

3. The semiconductor light-emitting device according to claim 1, wherein the luminescent layer is disposed inside the structured portion.

4. The semiconductor light-emitting device according to claim 1, wherein the lower surface has at least one of a square and a polygonal shape, and the first side surfaces are formed in corners of the structured portion.

5. The semiconductor light-emitting device according to claim 1, wherein the structured portion has a frustum shape.

6. The semiconductor light-emitting device according to claim 1, wherein the first side surfaces are curved to be convex outward.

7. The semiconductor light-emitting device according to claim 1, wherein the first side surfaces define rounded sides of the lower surface and the upper surface, and a curvature radius of the rounded sides of the upper surface is larger than that of the lower surface.

8. The light-emitting device according to claim 1, further including an electrode structure, wherein the light-emitting device has a plurality of the structured portions, and the electrode structure is provided so that the structured portions substantially simultaneously emit light.

9. The light-emitting device according to claim 1, further comprising a pair of a positive electrode and a negative electrode on a same surface side over the upper surface of the structured portion.

10. The light-emitting device according to claim 9, wherein one of the pair of electrodes covers part of the inclined side surfaces of the structured portion.

11. The light-emitting device according to claim 1, wherein the light-emitting device has a plurality of the structured portions separately disposed on a substrate, and further includes electrodes disposed so that the structured portions substantially simultaneously emit light.

12. The light-emitting device according to claim 9, wherein the upper surface of the structured portion defines a mounting surface which opposes a mounting base when the light-emitting device is disposed on the mounting base, and wherein one of the pair of electrodes is disposed on a substrate, and another electrode comprises an interconnect portion disposed on a mounting base side so as to be connected to upper surfaces of a plurality of structured portions.

13. The light-emitting device according to claim 1, further comprising a pair of electrodes disposed separately on the upper surface side of the structured portion and on the lower surface side, wherein the pair of electrodes are respectively disposed on a surface of the first conductivity type layer and a surface of the second conductivity type layer.

14. The light-emitting device according to claim 13, further comprising a light-transmissive insulating layer covering the inclined side surfaces of the structured portion;

and a filling member around the inclined side surfaces with the light-transmissive insulating layer therebetween.

15. The light-emitting device according to claim 13, wherein the light-emitting device has a plurality of the structured portions, and the structured portions are separated from one another by a protruding filling member.

16. The light-emitting device according to claim 14, wherein the luminescent layer is disposed inside the structured portion, and the filling member protrudes below the luminescent layer toward the lower surface side of the structured portion.

17. A light-emitting apparatus comprising:

a light-emitting device comprising a structured portion including a first conductivity type layer;

a second conductivity type layer; and

a luminescent layer between the first and second conductivity type layers,

wherein an upper surface of the structured portion has a smaller width than a lower surface of the structured portion in sectional view, and the structured portion has inclined side surfaces, and

wherein the inclined side surfaces of the structured portion are defined by first side surfaces second side surfaces, a width of each of the first side surfaces increases from a lower surface side an upper surface side, and to a width of each of the second side surfaces increases from the upper surface side to the lower surface side, and

a mounting portion on which the light-emitting device is placed, wherein the light emitting device is mounted on a support and then placed on the mounting portion.

18. The light-emitting apparatus according to claim 17, further comprising a light-transforming member for transforming part of light emitted from the light-emitting device into light having a different wavelength.

19. The light-emitting apparatus according to claim 18, wherein the light-transforming member comprises an aluminum garnet phosphor containing Al;

at least one element selected from the group consisting of Y, Lu, Sc, La, Gd, Tb, Eu, and Sm;

one of Ga and In, and at least one element selected from the rare earth elements.

20. The light-emitting apparatus according to claim 18, wherein the light-transforming member comprises a phosphor expressed by (Re₁₋

xR_x)₃(Al<sub>1−

y</sub>Ga_y)₅O₁₂ (0<

x<

1 and 0 ≦

y≦

1, wherein Re represents at least one element selected from the group consisting of Y, Gd, La, Lu, Tb, and Sm; and

R represents Ce or Ce and Pr).

21. The light-emitting apparatus according to claim 18, wherein the light-transforming member comprises a nitride phosphor containing N;

at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Zn; and

at least one element selected from the group consisting of C, Si, Ge, Sn, Ti, Zr, and Hf, and is activated by at least one element selected from the rear earth elements.

22. The light-emitting apparatus according to claim 18, wherein the nitride phosphor is expressed by the general formula L_XSi_YN_(2/3X+4/3Y):

Eu or L_XSi_YO_ZN<sub>(2/3X+4/3Y−

2/3Z)</sub>;

Eu (L represents Sr, Ca, or Sr and Ca).