Thin film transistor

• US 7,511,343 B2
• Filed: 10/12/2006
• Issued: 03/31/2009
• Est. Priority Date: 10/12/2006
• Status: Active Grant

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Li, Yuning, Ong, Beng S.
• Primary Examiner(s): PRENTY, MARK V
• Application Number:
  US11/546,857
• Publication Number:
  US 20080099803A1
• Time in Patent Office: 901 Days
• Field of Search: 257/347, 257/614, 257/618, 257/627, 257/410
• US Class Current: 257/347
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A thin film transistor is disclosed comprising a substrate, a dielectric layer, and a semiconductor layer. The semiconductor layer, which is crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the dielectric layer or substrate, is prepared by liquid depositing a zinc oxide nanodisk composition. The thin film transistor has good mobility and on/off ratio.

Claims

1. A thin film transistor, comprising:

a substrate;

a gate electrode, a source electrode, and a drain electrode;

a dielectric layer; and

a semiconductor layer;

wherein the semiconductor layer comprises zinc oxide nanodisks oriented with their c-axis perpendicular to the dielectric layer or the substrate; and

wherein the semiconductor layer is deposited upon a surface of the substrate, and the substrate has at least one type of polar functional group on the surface.

2. The thin film transistor of claim 1, wherein the polar functional group is selected from the group consisting of —

OH, —

NH₂, —

COOH, —

SO₃H, and —

P(═

O)(OH)₂.

3. A thin film transistor, comprising:

a substrate;

a gate electrode, a source electrode, and a drain electrode;

a dielectric layer; and

a semiconductor layer;

wherein the semiconductor layer comprises zinc oxide nanodisks oriented with their c-axis perpendicular to the dielectric layer or the substrate; and

wherein the semiconductor layer is deposited upon a surface of the dielectric layer and the dielectric layer has at east one type of polar functional group on the surface.

4. The thin film transistor of claim 3, wherein the polar functional group is selected from the group consisting of —

OH, —

NH₂, —

COOH, —

SO₃H, and —

P(═

O)(OH)₂.

5. A thin film transistor, comprising:

a substrate;

a gate electrode, a source electrode, and a drain electrode;

a dielectric layer; and

a semiconductor layer;

wherein the semiconductor layer comprises zinc oxide nanodisks oriented with their c-axis perpendicular to the dielectric layer or the substrate; and

wherein the substrate is a polymer film or sheet comprising a polyester, polycarbonate, or polyimide.

6. A thin film transistor, comprising:

a substrate;

a gate electrode, a source electrode, and a drain electrode;

a dielectric layer; and

a semiconductor layer;

wherein the semiconductor layer comprises zinc oxide nanodisks oriented with their c-axis perpendicular to the dielectric layer or the substrate; and

wherein the substrate has a thickness of from about 10 micrometers to about 10 millimeters.

7. A thin film transistor, comprising:

a substrate;

a gate electrode, a source electrode, and a drain electrode;

a dielectric layer; and

a semiconductor layer;

wherein the semiconductor layer comprises zinc oxide nanodisks oriented with their c-axis perpendicular to the dielectric layer or the substrate; and

wherein the semiconductor layer further comprises metal nanoparticles or metal oxide nanoparticles.