Sub-resolution assist feature to improve symmetry for contact hole lithography

• US 7,512,928 B2
• Filed: 08/12/2005
• Issued: 03/31/2009
• Est. Priority Date: 08/12/2005
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Terry, Mark, Soper, Robert, Jessen, Scott William
• Primary Examiner(s): Do; Thuan
• Assistant Examiner(s): Doan; Nghia M
• Application Number:
  US11/202,205
• Publication Number:
  US 20070035031A1
• Time in Patent Office: 1,327 Days
• Field of Search: 716 19- 21, 430/5, 430/30
• US Class Current: 716/53
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14

Abstract

A method of making a mask design having optical proximity correction features is provided. The method can include obtaining a target pattern comprising a plurality of target pattern features corresponding to a plurality of features to be imaged on a substrate. The method can also comprise generating a mask design comprising mask features corresponding to the plurality of features to be imaged on the substrate and controlling the aspect ratio of at least one of the features of the plurality of features to be imaged on the substrate by positioning a sub-resolution assist feature proximate to the corresponding mask feature.

Claims

1. A method of making a mask design having optical proximity correction features, comprising:

obtaining a target pattern comprising a plurality of target pattern features corresponding to a plurality of features to be imaged on a substrate;

generating a mask design comprising mask features corresponding to the plurality of features to be imaged on the substrate, wherein a first and a second mask feature of the mask features are spaced along a first direction by a pitch (P_x1) and the second mask feature is spaced from a third mask feature of the mask features along the first direction by a pitch (P_x2);

determining a relationship between (i) a pitch of the first and second mask features and the second and third mask features, and (ii) a spacing of sub-resolution assist features from their corresponding first and third mask features, wherein the relationship provides an indication of an aspect ratio of at least one of the features to be imaged on the substrate corresponding to one of the first and third mask features; and

controlling the aspect ratio of the at least one of the features to be imaged on the substrate by positioning one of the sub-resolution assist features proximate to the corresponding mask feature, wherein the sub-resolution assist feature corresponding to the first mask feature is spaced from the first mask feature by a distance (x₁), wherein (x₁) is determined based on (P_x1), and wherein the sub-resolution assist feature corresponding to the third mask feature is spaced from the third mask feature by a distance (x₂), such that (x₂) approximately equals (x₁) when (P_x2) approximately equals (P_x1), and (x₂) is different from (x₁) when (P_x2) is different from (P_x1).

2. The method of making a mask design according to claim 1, wherein the plurality of target pattern features are arranged in an array, and wherein a first set of target pattern features in the array are spaced substantially equidistant from each other along a first direction, and wherein a second set of target pattern features are spaced at nonequidistant distances from each other along the first direction, and further wherein the sub-resolution assist features used to control the aspect ratio of the features to be imaged on the substrate of the first set of target pattern features are separated from the mask features corresponding to the first set of target pattern features by a distance (x₁), and wherein the sub-resolution assist features used to control the aspect ratio of the features to be imaged on the substrate of the second set of target pattern features are separated from the mask features corresponding to the second set of target pattern features by a distance (x₂), wherein (x₁) is different than (x₂).

3. The method of making a mask design according to claim 1, wherein the sub-resolution assist features are positioned proximate to the corresponding mask feature based on a relationship between a critical dimension (CD_x) of features along a first direction and a critical dimension (CD_y) of features along a second direction.

4. The method of making a mask design according to claim 1, wherein the aspect ratio of the at least one of the feature on the substrate is from about 1.0 to about 1.5.

5. The method of making a mask design according to claim 1 further comprising:

referencing a look-up table to determine where to position the sub-resolution assist feature proximate to the corresponding mask feature, wherein the look-up table comprises information relating sub-resolution assist feature spacing and pitch of the mask features to the aspect ratio of the features to be imaged on the substrate.

6. A computer readable medium containing program code that configures a processor to perform a method for forming a mask design having optical proximity correction features, comprising:

program code for obtaining a target pattern comprising a plurality of target pattern features corresponding to a plurality of features to be imaged on a substrate;

program code for generating a mask design comprising mask features corresponding to the plurality of features to be imaged on the substrate, wherein a first and a second mask feature of the mask features are spaced along a first direction by a pitch (P_x1) and the second mask feature is spaced from a third mask feature of the mask features along the first direction by a pitch (P_x2);

program code for determining a relationship between (i) a pitch of the first and second mask features and the second and third mask features, and (ii) a spacing of sub-resolution assist features from their corresponding first and third mask features, wherein the relationship provides an indication of an aspect ratio of at least one of the features to be imaged on the substrate corresponding to one of the first and third mask features; and

program code for controlling the aspect ratio of the at least one of the features to be imaged on the substrate by positioning one of the sub-resolution assist features proximate to the corresponding mask feature, wherein the sub-resolution assist feature corresponding to the first mask feature is spaced from the first mask feature by a distance (x₁), wherein (x₁) is determined based on (P_x1), and wherein the sub-resolution assist feature corresponding to the third mask feature is spaced from the third mask feature by a distance (x₂), such that (x₂)approximately equals (x₁) when (P_x2) approximately equals (P_x1), and (x₂) is different from (x₁) when (P₂) is different from (P_x1).

7. The computer readable medium according to claim 6, wherein the program code for controlling the aspect ratio further comprises a look-up table relating sub-resolution assist feature spacing and pitch of the mask features to the aspect ratio of the features to be imaged on the substrate.