Plasma processing method and apparatus
First Claim
1. A plasma processing method for generating plasma within a vacuum chamber and processing a substrate placed on a substrate electrode within the vacuum chamber, the method comprising:
- generating the plasma by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to a counter electrode provided opposite to the substrate while the interior of the vacuum chamber is controlled to a specified pressure by introducing gas into the vacuum chamber and, simultaneously therewith, evacuating the interior of the vacuum chamber; and
processing the substrate using the generated plasma while controlling plasma distribution on the substrate using a single annular groove formed between the vacuum chamber and an insulating ring for insulating the vacuum chamber and the counter electrode from each other, wherein said insulating ring annularly surrounds the counter electrode, wherein the annular groove being located so that an outer-side face of the annular groove is located inside of and is non-coplanar with an inner surface of a sidewall of the vacuum chamber, and so that the annular groove has a groove width in a range of 3 mm to 50 mm.
0 Assignments
0 Petitions
Accused Products
Abstract
The interior of a vacuum chamber is maintained at a specified pressure by introducing a specified gas into the vacuum chamber having a plasma trap provided therein. Simultaneously, therewith, evacuation of the chamber is performed by a pump as an evacuating device, and a high-frequency power of 100 MHz is supplied to a counter electrode by counter-electrode use high-frequency power supply. Thus, uniform plasma is generated within the vacuum chamber, where plasma processing such as etching, deposition, and surface reforming can be carried out uniformly with a substrate placed on a substrate electrode.
-
Citations
15 Claims
-
1. A plasma processing method for generating plasma within a vacuum chamber and processing a substrate placed on a substrate electrode within the vacuum chamber, the method comprising:
-
generating the plasma by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to a counter electrode provided opposite to the substrate while the interior of the vacuum chamber is controlled to a specified pressure by introducing gas into the vacuum chamber and, simultaneously therewith, evacuating the interior of the vacuum chamber; and processing the substrate using the generated plasma while controlling plasma distribution on the substrate using a single annular groove formed between the vacuum chamber and an insulating ring for insulating the vacuum chamber and the counter electrode from each other, wherein said insulating ring annularly surrounds the counter electrode, wherein the annular groove being located so that an outer-side face of the annular groove is located inside of and is non-coplanar with an inner surface of a sidewall of the vacuum chamber, and so that the annular groove has a groove width in a range of 3 mm to 50 mm. - View Dependent Claims (3, 4, 8, 9, 10, 11)
-
-
2. A plasma processing apparatus comprising:
-
a vacuum chamber; a gas supply unit for supplying gas into said vacuum chamber; an evacuating device for evacuating an interior of said vacuum chamber; a substrate electrode for placing thereon a substrate within said vacuum chamber; a counter electrode provided opposite to said substrate electrode; a high-frequency power supply operable to supply a high-frequency power having a frequency of 50 MHz to 3 GHz to said counter electrode; and a single annular groove formed between said vacuum chamber and an insulating ring for insulating said vacuum chamber and said counter electrode from each other, wherein said insulating ring annularly surrounds the counter electrode, wherein said annular groove being located so that an outer-side face of said annular groove is located inside of and is non-coplanar with an inner surface of a sidewall of said vacuum chamber, said annular groove having a groove width in a range of 3 mm to 50 mm. - View Dependent Claims (5, 6, 7, 12, 13, 14, 15)
-
Specification