Method and apparatus for manufacturing magnetoresistive element

• US 7,514,117 B2
• Filed: 08/09/2005
• Issued: 04/07/2009
• Est. Priority Date: 08/10/2004
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Fukuzawa, Hideaki, Yuasa, Hiromi, Koui, Katsuhiko, Iwasaki, Hitoshi, Hashimoto, Susumu
• Primary Examiner(s): Bashore; Alain L
• Application Number:
  US11/199,448
• Publication Number:
  US 20060034022A1
• Time in Patent Office: 1,337 Days
• Field of Search: 427/127, 427/132, 428/812, 360/324.1
• US Class Current: 427/127
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: G11B 5/3929 Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: Y10T 428/115 Magnetic layer composition

Abstract

The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.

Claims

1. A method for manufacturing a magnetoresistive element including a magnetization pinned layer having a magnetization direction substantially pinned in one direction, a magnetization free layer having a magnetization direction that varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer, the method comprising:

a process of forming the spacer layer comprising;

depositing a first metal layer including a first element;

depositing a second metal layer including a second element that is more easily oxidized than the first element on the first metal layer;

performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas so as to cause the first element in the first metal layer to be sucked up in the second metal layer as the current paths; and

supplying an oxidation gas or a nitriding gas while irradiating the second metal layer with an ion beam or a RF plasma of a rare gas so as to form the insulating layer.

2. The method according to claim 1, wherein the first metal layer includes at least one element selected from the group consisting of Cu, Au, and Ag.

3. The method according to claim 1, wherein the second metal layer consists of at least one element selected from the group consisting of Al, Si, Hf, Ti, Ta, Mo, W, Nb, Mg, Cr, and Zr.

4. The method according to claim 1, wherein the pretreatment is performed with an acceleration voltage for the ion beam or the RF plasma of the rare gas setting to 30 V or more and 130 V or less.

5. The method according to claim 1, wherein the pretreatment is performed with an acceleration voltage for the ion beam or the RF plasma of the rare gas setting to 40V or more and 60 V or less.

6. The method according to claim 1, wherein the first metal layer has a thickness of 0.1 nm or more and 1 nm or less.

7. The method according to claim 1, wherein the insulating layer is an oxide or a nitride including at least one element selected from the group consisting of Al, Si, Hf, Ti, Ta, Mo, W, Nb, Mg, Cr, and Zr.

8. The method according to claim 1, wherein the second metal layer

has a thickness of 0.5 nm or more and 2 nm or less.

9. The method according to claim 1, wherein the current paths have a diameter of 2 nm or more and 6 nm or less.

10. The method according to claim 1, wherein the magnetization pinned layer has a body-centered cubic structure at an interface with the spacer layer.

11. The method according to claim 1, wherein the magnetization pinned layer comprises a FexCo100-x alloy layer, whereby x≧

30 atomic %.

12. The method according to claim 1, further comprising:

forming a Cu layer on the spacer layer.

13. The method according to claim 12, wherein the Cu layer has a thickness of 0.1 nm or more and 0.5 nm or less.

14. A method for manufacturing a magnetoresistive element including a magnetization pinned layer having a magnetization direction substantially pinned in one direction, a magnetization free layer having a magnetization direction that varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer, the method comprising:

a process of forming the spacer layer comprising;

depositing a first metal layer including a first element;

depositing a second metal layer consisting of one second element selected from the group consisting of Al, Si, Hf, Ti, Ta, Mo, W, Nb, Mg, Cr, and Zr on the first metal layer, the second element being more easily oxidized than the first element;

performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas so as to cause the first element in the first metal layer to be sucked up in the second metal layer as the current paths; and

supplying an oxidation gas or a nitriding gas while irradiating the second metal layer with an ion beam or a RF plasma of a rare gas so as to form the insulating layer.

15. The method according to claim 14, wherein the first metal layer includes one element selected from the group consisting of Cu, Au, and Ag.

16. the method according to claim 14, wherein the pretreatment is performed with an acceleration voltage for the ion beam or the RF plasma of the rare gas setting to 30 V or more and 130 V or less.

17. The method according to claim 14, wherein the pretreatment is performed with an acceleration voltage for the ion beam or the RF plasma of the rare gas setting to 40V or more and 60 V or less.

18. The method according to claim 14, wherein the first metal layer has a thickness of 0.1 nm or more and 1 nm or less.

19. The method according to claim 14, wherein the insulating layer is an oxide or a nitride including at least one element selected from the group consisting of Al, Si, Hf, Ti, Ta, Mo, W, Nb, Mg, Cr, and Zr.

20. The method according to claim 14, wherein the second metal layer has a thickness of 0.5 nm or more and 2 nm or less.

21. The method according to claim 14, wherein the current paths have a diameter of 2 nm or more and 6 nm or less.

22. The method according to claim 14, wherein the magnetization pinned layer has a body-centered cubic structure at an interface with the spacer layer.

23. The method according to claim 14, wherein the magnetization pinned layer comprises a FexCo100-x alloy layer, whereby x≧

30 atomic %.

24. The method according to claim 14, further comprising:

forming a Cu layer on the spacer layer.

25. The method according to claim 14, wherein the Cu layer has a thickness of 0.1 nm or more and 0.5 nm or less.