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Method and apparatus for manufacturing magnetoresistive element

  • US 7,514,117 B2
  • Filed: 08/09/2005
  • Issued: 04/07/2009
  • Est. Priority Date: 08/10/2004
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a magnetoresistive element including a magnetization pinned layer having a magnetization direction substantially pinned in one direction, a magnetization free layer having a magnetization direction that varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer, the method comprising:

  • a process of forming the spacer layer comprising;

    depositing a first metal layer including a first element;

    depositing a second metal layer including a second element that is more easily oxidized than the first element on the first metal layer;

    performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas so as to cause the first element in the first metal layer to be sucked up in the second metal layer as the current paths; and

    supplying an oxidation gas or a nitriding gas while irradiating the second metal layer with an ion beam or a RF plasma of a rare gas so as to form the insulating layer.

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