Method and apparatus for manufacturing magnetoresistive element
First Claim
1. A method for manufacturing a magnetoresistive element including a magnetization pinned layer having a magnetization direction substantially pinned in one direction, a magnetization free layer having a magnetization direction that varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer, the method comprising:
- a process of forming the spacer layer comprising;
depositing a first metal layer including a first element;
depositing a second metal layer including a second element that is more easily oxidized than the first element on the first metal layer;
performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas so as to cause the first element in the first metal layer to be sucked up in the second metal layer as the current paths; and
supplying an oxidation gas or a nitriding gas while irradiating the second metal layer with an ion beam or a RF plasma of a rare gas so as to form the insulating layer.
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Abstract
The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.
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Citations
25 Claims
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1. A method for manufacturing a magnetoresistive element including a magnetization pinned layer having a magnetization direction substantially pinned in one direction, a magnetization free layer having a magnetization direction that varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer, the method comprising:
a process of forming the spacer layer comprising; depositing a first metal layer including a first element; depositing a second metal layer including a second element that is more easily oxidized than the first element on the first metal layer; performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas so as to cause the first element in the first metal layer to be sucked up in the second metal layer as the current paths; and supplying an oxidation gas or a nitriding gas while irradiating the second metal layer with an ion beam or a RF plasma of a rare gas so as to form the insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for manufacturing a magnetoresistive element including a magnetization pinned layer having a magnetization direction substantially pinned in one direction, a magnetization free layer having a magnetization direction that varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer, the method comprising:
a process of forming the spacer layer comprising; depositing a first metal layer including a first element; depositing a second metal layer consisting of one second element selected from the group consisting of Al, Si, Hf, Ti, Ta, Mo, W, Nb, Mg, Cr, and Zr on the first metal layer, the second element being more easily oxidized than the first element; performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas so as to cause the first element in the first metal layer to be sucked up in the second metal layer as the current paths; and supplying an oxidation gas or a nitriding gas while irradiating the second metal layer with an ion beam or a RF plasma of a rare gas so as to form the insulating layer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
Specification