Methods relating to singulating semiconductor wafers and wafer scale assemblies

• US 7,514,291 B2
• Filed: 11/18/2005
• Issued: 04/07/2009
• Est. Priority Date: 03/10/2004
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Akram, Salman
• Primary Examiner(s): LEE, HSIEN MING
• Application Number:
  US11/282,922
• Publication Number:
  US 20060079024A1
• Time in Patent Office: 1,236 Days
• Field of Search: 438/110, 438/113, 438/458, 438/459, 438/460, 438/462
• US Class Current: 438/110
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 26/364 for making a groove or trench, e.g. for scribing a break initiation groove
• CPC Class Codes: B23K 26/40 taking account of the properties of the material involved
• CPC Class Codes: B28D 1/221 by thermic methods
• CPC Class Codes: B28D 5/00 Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor working by grinding or polishing B24; for artistic purposes B44B
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2924/10156 at the periphery

Abstract

Methods relating to singulation of dice from semiconductor wafers. Trenches or channels are formed in the bottom surface of a semiconductor wafer, corresponding in location to wafer streets. The trenches may be formed by etching or through an initial laser cut. The wafer is then singulated along the streets with a laser, preferably having a beam narrower than the trenches. Multiple, laterally spaced lasers may be used in combination during a single pass to perform simultaneous singulating cuts. Additional edge protection for integrated circuitry on the active surface of the semiconductor dice may be provided by forming trenches or channels along the streets in the active surface instead of the bottom surface, disposing protective material along the streets and within the trenches prior to singulation and cutting through the wafer, leaving protective material on the sidewalls of the channels.

Claims

1. A method for singulating at least one semiconductor die from a semiconductor wafer, the method comprising:

forming at least one channel in a semiconductor wafer body having an active surface and an opposing, bottom surface, the at least one channel being formed in the active surface thereof in alignment with a plurality of streets on the active surface circumscribing a location of at least one semiconductor die;

depositing a dielectric material over at least a portion of the active surface of the semiconductor wafer body, substantially filling the at least one channel with the dielectric material and leaving at least one contact location on the active surface exposed through the dielectric material;

cutting through the semiconductor wafer body between the active surface thereof and the bottom surface thereof substantially along a center of the at least one channel and through the dielectric material therein with at least one laser beam having a beam width narrower than a width of the at least one channel to leave portions of the dielectric material covering sidewalls of the at least one channel after cutting through the semiconductor wafer body is complete; and

forming a discrete conductive element on the at least one contact location.

2. The method of claim 1, wherein leaving at least one contact location exposed through the dielectric material comprises providing at least one opening in the dielectric material over the at least one contact location.

3. The method of claim 2, wherein providing the at least one opening in the dielectric material comprises selectively depositing the dielectric material around the at least one contact location.

4. The method of claim 2, wherein providing the at least one opening in the dielectric material comprises forming the at least one opening through the dielectric material after deposition thereof.

5. The method of claim 2, further comprising forming an under bump metallization (UBM) structure by depositing at least one layer of conductive material in contact with the at least one contact location through the at least one opening.

6. The method of claim 5, further comprising disposing a discrete conductive element on the UBM structure.

7. The method of claim 6, wherein disposing the discrete conductive element on the UBM structure comprises forming or disposing a solder ball on the UBM structure.

8. The method of claim 1, wherein forming the discrete conductive element comprises forming the discrete conductive element of conductive or conductor-filled epoxy.

9. A method for singulating at least one semiconductor die from a semiconductor wafer, the method comprising:

forming at least one channel in a semiconductor wafer body having an active surface and an opposing, bottom surface, the at least one channel being formed in the active surface thereof in alignment with a plurality of streets on the active surface circumscribing a location of at least one semiconductor die;

depositing a protective layer of material over at least a portion of the active surface of the semiconductor wafer body and substantially filling the at least one channel with the protective layer of material; and

cutting through the semiconductor wafer body between the active surface thereof and the bottom surface thereof, the cut being effected from the bottom surface thereof and substantially along a center of the at least one channel and through the protective layer of material therein with at least one laser beam having a beam width narrower than a width of the at least one channel to leave portions of the protective layer of material covering sidewalls of the at least one channel after cutting through the semiconductor wafer body is complete.

10. The method of claim 9, wherein forming the at least one channel in the semiconductor wafer body comprises etching the at least one channel.

11. The method of claim 10, wherein etching the at least one channel comprises performing a wet etch or a dry etch.

12. The method of claim 10, wherein etching the at least one channel comprises performing an anisotropic etch or an isotropic etch.

13. The method of claim 9, wherein forming the at least one channel in the semiconductor wafer body comprises cutting the at least one channel using at least one laser beam.

14. The method of claim 9, wherein depositing the protective layer of material comprises depositing a dielectric material.

15. The method of claim 14, wherein depositing the dielectric material comprises depositing a polyimide material.

16. The method of claim 9, wherein depositing the protective layer of material comprises stenciling, screen printing, spraying or spin coating.

17. A method for singulating at least one semiconductor die from a semiconductor wafer, the method comprising:

forming at least one channel in a semiconductor wafer body having an active surface and an opposing, bottom surface, the at least one channel being formed in the active surface thereof in alignment with a plurality of streets on the active surface circumscribing a location of at least one semiconductor die;

depositing a dielectric material over at least a portion of the active surface of the semiconductor wafer body, substantially filling the at least one channel with the dielectric material and leaving at least one contact location on the active surface exposed through the dielectric material by selectively depositing the dielectric material around the at least one contact location; and

cutting through the semiconductor wafer body between the active surface thereof and the bottom surface thereof substantially along a center of the at least one channel and through the dielectric material therein with at least one laser beam having a beam width narrower than a width of the at least one channel to leave portions of the dielectric material covering sidewalls of the at least one channel after cutting through the semiconductor wafer body is complete.