Dual work function metal gate structure and related method of manufacture
First Claim
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1. A method, comprising:
- forming a metal layer having a first work function;
adjusting the work function of a selected portion of the metal layer by doping the selected portion with fluorine (F), such that the work function of the selected portion of the metal layer is reduced to a second work function less than the first work function as a function of the doping with fluorine.
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Abstract
A semiconductor device and related methods of manufacture are disclosed in which dual work function metal gate electrodes are formed from a single metal layer by doping the metal layer with carbon and/or fluorine.
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Citations
40 Claims
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1. A method, comprising:
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forming a metal layer having a first work function; adjusting the work function of a selected portion of the metal layer by doping the selected portion with fluorine (F), such that the work function of the selected portion of the metal layer is reduced to a second work function less than the first work function as a function of the doping with fluorine. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method, comprising:
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forming a metal layer having a first work function; adjusting the first work function in a selected portion of the metal layer by doping the selected portion with carbon (C), such that the selected portion of the metal layer has a second work function greater than the first work function. - View Dependent Claims (11, 12, 13, 14)
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15. A method, comprising:
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forming an NMOS active region and a PMOS active region in a substrate; forming a gate insulating layer on the substrate covering the NMOS active region and the PMOS active region; forming a metal layer having a first work function on the gate insulating layer; adjusting the first work function in a selected portion of the metal layer by doping the selected portion with either fluorine to decrease the first work function or carbon to increase the first work function, such that the selected portion has a second work function different from the first work function. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method, comprising:
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forming an NMOS active region and a PMOS active region in a substrate; forming a gate insulating layer on the substrate covering the NMOS active region and the PMOS active region; forming a metal layer having a mid-bandgap work function on the gate insulating layer; adjusting the work function in a first selected portion of the metal layer formed on the NMOS active region by doping the first selected portion with fluorine, such that the first selected portion has a NMOS-compatible work function; and
,adjusting the work function in a second selected portion of the metal layer formed on the PMOS active region by doping the second selected portion with carbon, such that the second selected portion has a PMOS-compatible work function. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. A method of forming a semiconductor device having a NMOS metal gate structure and a PMOS metal gate structure, the method comprising:
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forming a single metal layer having an initial work function on a gate insulating layer; adjusting the work function for a selected portion of the metal layer by doping either a first selected portion with fluorine to decrease the initial work function, or a second selected portion with carbon to increase the initial work function; wherein either the PMOS metal gate structure is formed from a first metal gate electrode formed from the second selected portion of the metal layer, or the NMOS metal gate structure is formed from a second metal gate electrode formed from the second selected portion of the metal layer.
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38. A method of defining a dual work functions in respective portions of a metal layer, comprising:
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selecting a metal type, a formation process adapted to the metal type, and related process conditions to form the metal layer having an initial work function; selectively doping a first portion of the metal layer with carbon to increase the initial work function, and selectively doping a second portion of the metal layer with fluorine to decrease the initial work function. - View Dependent Claims (39, 40)
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Specification