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Tri-gate devices and methods of fabrication

  • US 7,514,346 B2
  • Filed: 12/07/2005
  • Issued: 04/07/2009
  • Est. Priority Date: 08/23/2002
  • Status: Expired due to Term
First Claim
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1. A method of forming a semiconductor device comprising:

  • forming a semiconductor body having a top surface and laterally opposite sidewalls;

    masking the top surface of the semiconductor body;

    roughening said laterally opposite sidewalls of said semiconductor body while the top surface remains unaltered to enhance the oxidation rate of said sidewalls of said semiconductor body relative to the top surface;

    removing the mask from the top surface of the semiconductor body; and

    growing an oxide on said sidewalls of said semiconductor body and on the top surface of said semiconductor body wherein the thickness of said oxide on said sidewalls of said semiconductor body is greater than the thickness of said oxide on said top surface of said semiconductor body due at least in part to the roughening of the sidewalls.

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