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Nanophotovoltaic devices

  • US 7,514,725 B2
  • Filed: 11/30/2004
  • Issued: 04/07/2009
  • Est. Priority Date: 11/30/2004
  • Status: Expired due to Fees
First Claim
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1. An nanophotovoltaic device, comprisinga three-dimensional semi-conductor structure,a metallic layer disposed over at least a portion of the semiconductor structure to form a junction therewith, said junction defining a space charge region,wherein a combination of said semi-conductor structure and said metallic layer has a size in each of said three dimensions in a range of about 50 nm to about 5000 nm,wherein exposure of said nanophotovoltaic device to radiation having a selected wavelength causes generation of electron-hole pairs that provide a voltage across the device.

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