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Piezoelectric MEMS integration with GaN technology

  • US 7,514,759 B1
  • Filed: 04/11/2005
  • Issued: 04/07/2009
  • Est. Priority Date: 04/19/2004
  • Status: Expired due to Fees
First Claim
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1. A process for fabricating a combined micro electromechanical/gallium nitride (GaN) structure, the process comprising:

  • providing a substrate;

    depositing a GaN layer on the substrate;

    obtaining a GaN transistor structure;

    depositing and patterning a first metal layer on the GaN layer;

    depositing a non-metal separation layer on the GaN layer and on the GaN transistor structure;

    patterning the non-metal separation layer to form a protective region to protect the GaN transistor structure;

    depositing a sacrificial layer on the protective region, the patterned first metal layer and at least a portion of the GaN layer so as to leave a further portion of the GaN layer between the protective region and the patterned first metal layer exposed;

    depositing and patterning a second metal layer on the sacrificial layer;

    depositing a support layer on the sacrificial layer, the patterned second metal layer and the exposed GaN layer;

    providing a piezoelectric structure on the support layer;

    patterning the support layer in proximity of the GaN transistor structure to provide access holes;

    removing the non-metal separation layer and the sacrificial layer from the proximity of the GaN transistor structure through the access holes;

    providing a metal overlay above the GaN transistor structure, the metal overlay forming a gate of the GaN transistor structure;

    providing a gate passivation layer above the gate of the GaN transistor structure;

    providing a further metal layer above the gate passivation layer; and

    removing the sacrificial layer between the first patterned metal layer and the second patterned metal layer.

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