IC-compatible MEMS structure

• US 7,514,760 B1
• Filed: 03/09/2007
• Issued: 04/07/2009
• Est. Priority Date: 03/09/2007
• Status: Active Grant

• Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation (Semiconductor Manufacturing International Corporation)
• Original Assignee: Silicon Clocks, Inc. (Silicon Laboratories Incorporated)
• Inventors: Quevy, Emmanuel P.
• Primary Examiner(s): Toledo; Fernando L
• Application Number:
  US11/716,284
• Time in Patent Office: 760 Days
• Field of Search: 257/414, 257/415, 257/416, 257/417, 438/50, 438/52, 438/53
• US Class Current: 257/416
• CPC Class Codes: B81B 2201/0271 Resonators; ultrasonic resonators
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0735 Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
• CPC Class Codes: H03H 2009/02496 Horizontal, i.e. parallel to the substrate plane
• CPC Class Codes: H03H 3/0072 of microelectro-mechanical resonators or networks micromembranes or microbeams B81B2203/01; manufacture of microstructural devices in general B81C
• CPC Class Codes: H03H 9/2426 in combination with other electronic elements
• CPC Class Codes: H03H 9/2457 Clamped-free beam resonators

Abstract

An IC-compatible MEMS structure and a method to form such a structure are described. In an embodiment, an integrated circuit having a MEMS device is formed. The structure comprises a plurality of semiconductor devices formed on a substrate. A plurality of interconnects is above and coupled with the plurality of semiconductor devices, incorporating the plurality of semiconductor devices into the integrated circuit. A MEMS resonator is formed above, and coupled with, the plurality of interconnects. In one embodiment, the MEMS resonator is comprised of a member and a pair of electrodes. The pair of electrodes is electrically coupled with the plurality of interconnects.

Claims

1. An integrated circuit having a MEMS device, comprising:

a plurality of semiconductor devices formed on a substrate;

a plurality of interconnects above and coupled with said plurality of semiconductor devices, wherein said plurality of interconnects incorporates said plurality of semiconductor devices into said integrated circuit; and

a MEMS resonator above and coupled with said plurality of interconnects, wherein said MEMS resonator is comprised of a member, a driver electrode and a sensor electrode, wherein said driver electrode and said sensor electrode are electrically coupled with said plurality of interconnects.

2. The integrated circuit of claim 1 wherein said member is also electrically coupled with said plurality of interconnects.

3. The integrated circuit of claim 1 wherein said member is electrically isolated from said plurality of interconnects.

4. The integrated circuit of claim 1 wherein said member, said driver electrode and said sensor electrode are all in the same plane.

5. The integrated circuit of claim 1 wherein said member comprises a resonating portion selected from the group consisting of a cantilever arm, a beam, a tuning fork and a plate.

6. The integrated circuit of claim 1 wherein said driver electrode and said sensor electrode are electrically coupled with said plurality of interconnects by a first set of couplers, wherein said member is anchored by a second set of couplers, and wherein said first and second sets of couplers are comprised of the same material.

7. The integrated circuit of claim 6 wherein at least one of said driver electrode and said sensor electrode is coupled with said plurality of interconnects by a coaxial contact extending through to said plurality of semiconductor devices.

8. The integrated circuit of claim 1, further comprising:

a second plurality of interconnects above said MEMS resonator.

9. The integrated circuit of claim 1 wherein said MEMS resonator is a clocking device.

10. A method of fabricating an integrated circuit having a MEMS device, comprising:

forming a plurality of semiconductor devices on a substrate;

forming a plurality of interconnects coupled with said plurality of semiconductor devices, wherein said plurality of interconnects incorporates said plurality of semiconductor devices into said integrated circuit; and

,

subsequent to forming said plurality of semiconductor devices and said plurality of interconnects, forming a MEMS resonator coupled with said plurality of interconnects, wherein said MEMS resonator is comprised of a member and a pair of electrodes, wherein said pair of electrodes is electrically coupled with said plurality of interconnects.

11. The method of claim 10 wherein all process steps used to form said MEMS resonator are carried out at temperatures less than 450 degrees Celsius.

12. The method of claim 10 wherein said member comprises a resonating portion selected from the group consisting of a cantilever arm, a beam, a tuning fork and a plate.

13. The method claim 10 wherein said pair of electrodes is electrically coupled with said plurality of interconnects by a first set of couplers, wherein said member is anchored by a second set of couplers, and wherein said first and second sets of couplers are comprised of the same material.

14. The method of claim 13 wherein at least one electrode of the pair of electrodes is coupled with said plurality of interconnects by a coaxial contact extending through to said plurality of semiconductor devices.

15. The method of claim 10, further comprising:

subsequent to forming said MEMS resonator, forming a second plurality of interconnects above said MEMS resonator.

16. The method of claim 10 wherein said MEMS resonator is a clocking device.

17. A method of fabricating an integrated circuit having a MEMS device, comprising:

providing a substrate having a plurality of semiconductor devices incorporated into an integrated circuit by a plurality of interconnects;

forming an isolation layer above said plurality of interconnects;

forming a first set and a second set of conductive couplers in said isolation layer and connected with said plurality of interconnects;

forming a first release layer above said isolation layer;

forming a first structural layer above said first release layer;

patterning said first structural layer and said first release layer to form a member, a driver electrode and a sensor electrode above a patterned first release layer, wherein said driver electrode is above said first set of conductive couplers, wherein said sensor electrode is above said second set of conductive couplers, and wherein said member is in between said driver and said sensor electrodes;

forming coupler holes in each of said member, said driver electrode and said sensor electrode, wherein said coupler holes extend through said patterned first release layer;

forming a second release layer adjacent to the sidewalls of said member;

forming a second structural layer adjacent to said driver and said sensor electrodes, adjacent to said second release layer, and in said coupler holes; and

removing at least a portion of each of said patterned first and said second release layers.

18. The method of claim 17 wherein forming said second structural layer in said coupler holes provides couplers for each of said member, said driver electrode and said sensor electrode, wherein providing the couplers anchors said member, wherein providing the couplers electrically couples said driver electrode with said first set of conductive couplers, and wherein providing the couplers electrically couples said sensor electrode with said second set of conductive couplers.

19. The method of claim 18 wherein all process steps used to form said MEMS resonator are carried out at temperatures less than 450 degrees Celsius.

20. The method of claim 17 wherein forming a second structural layer encapsulates a portion of said patterned first release layer underneath said driver and said sensor electrodes.

21. The method of claim 20 wherein removing the at least said portion of each of said patterned first and said second release layers comprises retaining the encapsulated portion of said patterned first release layer.

22. The method of claim 17 wherein removing the at least said portion of each of said patterned first and said second release layers provides a resonating portion of said member.

23. The method of claim 22 wherein said first and said second structural layers comprise polycrystalline silicon/germanium with an atomic germanium concentration in the range of 50-70% and a boron dopant impurity atomic concentration in the range of 1×

10¹⁸-5×

10²⁰ atoms/cm³, wherein said first and said second release layers are comprised of germanium with an atomic concentration of greater than 98% germanium atoms and a boron dopant impurity atomic concentration in the range of 5×

10¹⁹-5×

10²⁰ atoms/cm³, and wherein removing the at least said portion of each of said patterned first release layer and said second release layer consists of applying a wet etchant comprising and an aqueous solution of hydrogen peroxide with an H₂O₂ concentration in the range of 25-35% by volume and a temperature in the range of 80-95°

C.

24. The method of claim 17 wherein said member is a component of a MEMS clocking device.