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Fabricating method of a pixel structure having electrical field shielding layer and storage capacitor with three transparent electrodes

  • US 7,515,217 B2
  • Filed: 10/04/2006
  • Issued: 04/07/2009
  • Est. Priority Date: 12/05/2003
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a pixel structure, comprising:

  • forming an active element, a scan line and a data line on a substrate, the active element being electrically coupled to the scan line and the data line;

    forming a capacitor electrode on the substrate;

    simultaneously forming a transparent capacitor electrode over the capacitor electrode and forming an electrical field shielding layer above the data line; and

    forming a pixel electrode over the transparent capacitor electrode, the pixel electrode electrically coupling to the active element, wherein the capacitor electrode, the transparent capacitor electrode and the pixel electrode form a pixel storage capacitor, and the electrical field shielding layer is between the data line and the pixel electrode, wherein the capacitor electrode, the electrical field shielding layer, and the pixel electrode are made from indium tin oxide or indium zinc oxide.

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