Process for preparing nanostructured cerium oxide materials of controlled surface chemistry of zeta potential
First Claim
1. Stoichiometric-nanostructured material produced through the steps comprising:
- generating a plasma;
forming an “
active volume”
through introduction of an oxidizing gas into the plasma, before the plasma is expanded into a field free zone, in a region in close proximity to either (1) a zone of charge carrier generation, or (2) a region of current conduction between field generating elements, including the surface of the field generating electrodes; and
transferring energy from the plasma to a precursor material or materials and forming in the “
active volume”
at least one of stoichiometric-nanostructured material and a vapor that may be condensed to form a stoichiometric-nanostructured material;
whereinthe stoichiometric-nanostructured material is cerium oxide and has a surface chemistry with the value of the zeta potential greater than 20 mV.
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Abstract
A process to prepare stoichiometric-nanostructured materials comprising generating a plasma, forming an “active volume” through introduction of an oxidizing gas into the plasma, before the plasma is expanded into a field-free zone, either (1) in a region in close proximity to a zone of charge carrier generation, or (2) in a region of current conduction between field generating elements, including the surface of the field generation elements, and transferring energy from the plasma to a precursor material to form in the “active volume” at least one stoichiometric-nanostructured material and a vapor that may be condensed to form a stoichiometric-nanostructured material. The surface chemistry of the resulting nanostructured materials is substantially enhanced to yield dispersion stable materials with large zeta-potentials.
31 Citations
9 Claims
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1. Stoichiometric-nanostructured material produced through the steps comprising:
-
generating a plasma; forming an “
active volume”
through introduction of an oxidizing gas into the plasma, before the plasma is expanded into a field free zone, in a region in close proximity to either (1) a zone of charge carrier generation, or (2) a region of current conduction between field generating elements, including the surface of the field generating electrodes; andtransferring energy from the plasma to a precursor material or materials and forming in the “
active volume”
at least one of stoichiometric-nanostructured material and a vapor that may be condensed to form a stoichiometric-nanostructured material;
whereinthe stoichiometric-nanostructured material is cerium oxide and has a surface chemistry with the value of the zeta potential greater than 20 mV. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification