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Memory cell and method for forming the same

  • US 7,518,174 B2
  • Filed: 01/02/2008
  • Issued: 04/14/2009
  • Est. Priority Date: 06/21/2002
  • Status: Expired due to Term
First Claim
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1. A memory cell formed on a surface of a substrate, comprising:

  • a memory cell capacitor; and

    a vertical transistor comprising;

    an active region formed in the substrate;

    an epitaxial post extending from the surface of the substrate over the active region, the epitaxial post having a lightly doped conductive region formed therein to electrically couple the memory cell capacitor to the epitaxial post of the vertical transistor, the memory cell capacitor formed over the epitaxial post; and

    a gate formed at least partially around a perimeter of the epitaxial post.

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