Field effect transistor with narrow bandgap source and drain regions and method of fabrication
First Claim
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1. A transistor comprising:
- a gate electrode formed on a gate dielectric layer formed on a silicon layer;
a pair of sidewall spacers formed along opposite sides of said gate electrode; and
a pair of source/drain regions formed on opposite sides of and extending beneath said gate electrode, said pair of source/drain regions comprising a narrow bandgap semiconductor film, wherein said narrow bandgap semiconductor film has a bulk mobility between 10,000 to 80,000 cm2V−
1s−
1 and wherein said narrow bandgap semiconductor film is doped to an n type or p type conductivity;
wherein said pair of source/drain regions comprising said narrow bandgap semiconductor film is formed adjacent to said sidewall spacers and above a top surface of said gate dielectric layer.
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Abstract
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
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Citations
22 Claims
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1. A transistor comprising:
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a gate electrode formed on a gate dielectric layer formed on a silicon layer; a pair of sidewall spacers formed along opposite sides of said gate electrode; and a pair of source/drain regions formed on opposite sides of and extending beneath said gate electrode, said pair of source/drain regions comprising a narrow bandgap semiconductor film, wherein said narrow bandgap semiconductor film has a bulk mobility between 10,000 to 80,000 cm2V−
1s−
1 and wherein said narrow bandgap semiconductor film is doped to an n type or p type conductivity;wherein said pair of source/drain regions comprising said narrow bandgap semiconductor film is formed adjacent to said sidewall spacers and above a top surface of said gate dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A transistor comprising:
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a gate dielectric layer formed on a first surface of a silicon layer; a gate electrode having a pair of laterally opposite sidewalls formed on said gate dielectric layer; a pair of sidewall spacers formed adjacent to said pair of laterally opposite sidewalls of said gate electrode; a pair of source/drain regions formed from an epitaxial narrow bandgap semiconductor film having a bandgap of less than 0.75 eV and a electron mobility greater than 10,000 cm2V−
1s−
1 wherein said narrow bandgap semiconductor film of said pair of source/drain regions extends beneath said gate dielectric layer and has a top surface extending above a top surface of said gate dielectric layer; anda pair of non-alloyed contacts in direct contact with said narrow bandgap semiconductor. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A transistor comprising:
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a gate electrode formed on a gate dielectric layer formed on a silicon layer; and a pair of source/drain regions formed on opposite sides of and extending directly beneath said gate electrode , said pair of source/drain regions comprising a narrow bandgap semiconductor film, wherein said narrow bandgap semiconductor film has a bulk mobility between 10,000 to 80,000 cm2V−
1s−
1 and is doped to a p type conductivity or a n type conductivity. - View Dependent Claims (20, 21, 22)
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Specification