Liquid crystal display device and fabricating method thereof
First Claim
1. A liquid crystal display device, comprising:
- a gate line;
a data line crossing the gate line thereby defining pixel area;
a gate insulating film between the gate and data lines;
a thin film transistor connected to the gate and data lines;
a semiconductor layer defining a channel of each thin film transistor;
a passivation film on the data line and on the thin film transistor;
a pixel hole corresponding to a pixel area, wherein the pixel hole passes through the passivation film and at least partially through the gate insulating film; and
a pixel electrode within the pixel hole, wherein a portion of the pixel electrode is on the gate insulating film and overlaps a portion of the gate line to form a storage capacitor,wherein a thickness of the gate insulating film outside the pixel hole is greater than a thickness of the gate insulating film on the portion of the gate line forming the storage capacitor within the pixel hole.
2 Assignments
0 Petitions
Accused Products
Abstract
A TFT substrate having a storage capacitor with an increased capacitance and aperture ratio, and a simplified method of fabricating the same, includes gate and data lines crossing each other to define pixel areas; a gate insulating film between the gate and data lines; TFTs connected to the gate and data lines; a semiconductor pattern defining a channel of the TFTs and overlapped by the data lines; a passivation film covering the data lines and the TFTs; and at least one pixel electrode connected to a TFT and provided within a pixel hole that is arranged within a pixel area. The pixel hole is formed through the passivation film and partially through the gate insulating film. Further, a storage capacitor includes a portion of the pixel electrode that overlaps with an underlying gate line with a portion of the gate insulating film that defines the pixel hole.
33 Citations
31 Claims
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1. A liquid crystal display device, comprising:
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a gate line; a data line crossing the gate line thereby defining pixel area; a gate insulating film between the gate and data lines; a thin film transistor connected to the gate and data lines; a semiconductor layer defining a channel of each thin film transistor; a passivation film on the data line and on the thin film transistor; a pixel hole corresponding to a pixel area, wherein the pixel hole passes through the passivation film and at least partially through the gate insulating film; and a pixel electrode within the pixel hole, wherein a portion of the pixel electrode is on the gate insulating film and overlaps a portion of the gate line to form a storage capacitor, wherein a thickness of the gate insulating film outside the pixel hole is greater than a thickness of the gate insulating film on the portion of the gate line forming the storage capacitor within the pixel hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of fabricating a liquid crystal display device, comprising:
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forming a gate metal pattern on a substrate, wherein the gate metal pattern includes a gate line and a gate electrode; forming a gate insulating film on the gate metal pattern; sequentially forming a semiconductor pattern and a data metal pattern on the gate insulating film, wherein the data metal pattern includes a data line, a source electrode, and a drain electrode; forming a passivation film on the data metal pattern; forming a pixel hole through the passivation film and at least partially through the gate insulating film, wherein a portion of the drain electrode is exposed by the pixel hole; and forming a pixel electrode within the pixel hole, wherein the pixel electrode contacts the exposed portion of the drain electrode, and a portion of the pixel electrode is on the gate insulating film and overlaps a portion of the gate line to form a storage capacitor, and wherein a thickness of the gate insulating film outside the pixel hole is greater than a thickness of the gate insulating film on the portion of the gate line forming the storage capacitor within the pixel hole. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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Specification