Method and apparatus for integrating multiple sample plans

• US 7,519,447 B1
• Filed: 10/05/2004
• Issued: 04/14/2009
• Est. Priority Date: 10/05/2004
• Status: Active Grant

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Bode, Christopher A., Lensing, Kevin R.
• Primary Examiner(s): Masinick, Michael D
• Application Number:
  US10/958,949
• Time in Patent Office: 1,652 Days
• Field of Search: 700/109, 700/110, 700/121, 700/31, 438/16
• US Class Current: 700/110
• CPC Class Codes: G05B 2219/31459 Library with metrology plan for different type of workpieces
• CPC Class Codes: G05B 2219/31465 Determine which variables of the system to be monitored
• CPC Class Codes: G05B 23/0221 Preprocessing measurements, e.g. data collection rate adjustment; Standardization of measurements; Time series or signal analysis, e.g. frequency analysis or wavelets; Trustworthiness of measurements; Indexes therefor; Measurements using easily measured parameters to estimate parameters difficult to measure; Virtual sensor creation; De-noising; Sensor fusion; Unconventional preprocessing inherently present in specific fault detection methods like PCA-based methods

Abstract

The present invention provides a method and apparatus for integrating multiple sample plans. The method includes receiving a first wafer state data set from an in situ wafer measurement device, the first wafer state data set being indicative of at least one characteristic of at least one wafer processed by a processing tool and receiving a second wafer state data set from an ex situ wafer measurement device, the second wafer state data set being indicative of the at least one characteristic of the at least one wafer processed by the processing tool. The method also includes forming a third wafer state data set using the first and second wafer state data sets and determining the at least one characteristic of the at least one wafer based upon the third wafer state data set.

Claims

1. A method, comprising:

receiving a first wafer state data set from a first wafer measurement device, the first wafer state data set being indicative of at least one characteristic of at least one wafer processed by a processing tool to form a portion of an electronic component of a semiconductor device, the electronic component being formed above said at least one wafer by the processing tool;

receiving a second wafer state data set from a second wafer measurement device, the second wafer state data set being indicative of the at least one characteristic of the at least one wafer processed by the processing tool;

determining a sampling plan for at least one third measurement device in response to determining whether the first and second wafer state data sets adequately characterize said at least one characteristic of said at least one wafer;

receiving at least one third wafer state data set from the third wafer measurement device, the third wafer state data set being collected according to the sampling plan and being indicative of said at least one characteristic of said at least one wafer;

forming a fourth wafer state data set using the first, second, and third wafer state data sets; and

determining the at least one characteristic of the at least one wafer based upon the fourth wafer state data set.

2. The method of claim 1, wherein receiving the first and second wafer state data sets comprises receiving first and second wafer state data sets indicative of the at least one characteristic at first and second pluralities of sites on the at least one wafer.

3. The method of claim 2, wherein receiving the third wafer state data set comprises receiving a third wafer state data set indicative of the at least one characteristic at a third plurality of sites on the at least one wafer, the third plurality of sites being determined by the sampling plan.

4. The method of claim 3, wherein at least a portion of the first, second, and third plurality of sites overlap, and wherein forming the fourth data set comprises combining portions of the first, second, and third data sets associated with the overlapping portions of the first, second, and third plurality of sites, respectively.

5. The method of claim 3, wherein at least a portion of the first, second, and third plurality of sites overlap, and wherein forming the fourth data sent comprises comparing portions of the first, second, and third data sets associated with the overlapping portions of the first, second, and third plurality of sites, respectively.

6. The method of claim 5, further comprising calibrating at least one of the first and second data sets based upon the comparison.

7. The method of claim 5, further comprising matching the first and second data sets based upon the comparison.

8. The method of claim 1, further comprising determining whether the first and second wafer state data sets adequately characterize said at least one characteristic of said at least one wafer.

9. The method of claim 8, wherein determining the sampling plan comprises modifying an initial sampling plan to change at least one of a number of sites to be sampled, a sampling time, a sampling resolution, and a sampling granularity based upon at least one of the first and second wafer state data sets.

10. The method of claim 8, wherein the at least one wafer comprises a plurality of wafers, and wherein modifying the sampling plan comprises:

examining a reduced number of regions or wafers with at least one of higher accuracy, resolution granularity or time when the first and second wafer state data sets adequately characterize said at least one characteristic of said at least one wafer; and

examining a larger number of regions or wafers with at least one of lower accuracy, resolution, granularity, or time when the first and second wafer state data sets do not adequately characterize said at least one characteristic of said at least one wafer.

11. The method of claim 1, wherein the first wafer measurement device is at least one of an in situ and an ex situ wafer measurement device, wherein the second wafer measurement device is at least one of an in situ and an ex situ wafer measurement device, and wherein the third wafer measurement device is at least one of an in situ and an ex situ wafer measurement device.

12. An apparatus, comprising:

means for receiving a first wafer state data set from a first wafer measurement device, the first wafer state data set being indicative of at least one characteristic of at least one wafer processed by a processing tool to form a portion of an electronic component of a semiconductor device, the electronic component being formed above said at least one wafer by the processing tool;

means for receiving a second wafer state data set from a second wafer measurement device, the second wafer state data set being indicative of the at least one characteristic of the at least one wafer processed by the processing tool;

means for determining a sampling plan for at least one third measurement device in response to determining whether the first and second wafer state data sets adequately characterize said at least one characteristic of said at least one wafer;

means for receiving at least one third wafer state data set from the third wafer measurement device, the third wafer state data set being collected according to the sampling plan and being indicative of said at least one characteristic of said at least one wafer;

means for forming a fourth wafer state data set using the first, second, and third wafer state data sets; and

means for determining the at least one characteristic of the at least one wafer based upon the fourth wafer state data set.

13. A manufacturing system, comprising:

at least one processing tool for processing at least one wafer to form a portion of an electronic component of a semiconductor device, the electronic component being formed above said at least one wafer by the processing tool;

a first wafer measurement device configured to provide a first wafer state data set indicative of at least one characteristic of the at least one wafer;

a second wafer measurement device configured to provide a second wafer state data set indicative of the at least one characteristic of the at least one wafer;

at least one third measurement device configured to provide a third wafer state data set indicative of said at least one characteristic of said at least one wafer using a sampling plan determined based on whether the first and second wafer state data sets adequately characterize said at least one characteristic of said at least one wafer; and

a wafer characterization unit configured to;

receive the first wafer state data set;

receive the second wafer state data set;

receive at least one third wafer state data set collected according to the sampling plan;

form a fourth wafer state data set using the first, second, and third wafer state data sets; and

determine the at least one characteristic of the at least one wafer based upon the fourth wafer state data set.

14. The system of claim 13, wherein the first wafer measurement device is configured to provide a first wafer state data set indicative of the at least one characteristic at a first plurality of sites on the at least one wafer and wherein the second wafer measurement device is configured to provide a second wafer state data set indicative of the at least one characteristic at a second plurality of sites on the at least one wafer.

15. The system of claim 14, wherein said at least one third wafer measurement device is configured to provide at least one third wafer state data set indicative of the at least one characteristic at a third plurality of sites on the at least one wafer.

16. The system of claim 15, wherein at least a portion of the first, second, and third plurality of sites overlap, and wherein the wafer characterization unit is configured to combine portions of the first, second, and third data sets associated with the overlapping portions of the first, second, and third plurality of sites, respectively.

17. The system of claim 15, wherein at least a portion of the first, second, and third plurality of sites overlap, and wherein the wafer characterization unit is configured to compare portions of the first, second, and third data sets associated with the overlapping portions of the first, second, and third plurality of sites, respectively.

18. The system of claim 17, wherein the wafer characterization unit is configured to calibrate at least one of the first, second, and third data sets based upon the comparison.

19. The system of claim 17, wherein the wafer characterization unit is configured to match the first, second, and third data sets based upon the comparison.

20. The system of claim 15, wherein the wafer characterization unit is configured to provide a signal indicating that a number of sites to be sampled for at least one of the third wafer state data set is to be increased or decreased based upon at least one of the first and second wafer state data sets, and wherein a number of sites to be sampled is increased or decreased based upon the signal.

21. The system of claim 15, wherein the wafer characterization unit is configured to provide a signal indicating that at least one of a sampling time, a sampling resolution, and a sampling granularity is to be modified, and wherein at least one of a sampling time, a sampling resolution, and a sampling granularity is modified based upon the signal.

22. The method of claim 15, wherein the at least one wafer comprises a plurality of wafers, and wherein the wafer characterization unit is configured to provide a signal indicating that a reduced number of regions or wafers is to be sampled with at least one of higher accuracy, resolution, granularity, or time when the first and second wafer state data sets adequately characterize said at least one characteristic of said at least one wafer and a larger number of regions or wafers is to be sampled with at least one of lower accuracy, resolution, granularity, or time when the first and second wafer state data sets do not adequately characterize said at least one characteristic of said at least one wafer.