Micro structure, cantilever, scanning probe microscope and a method of measuring deformation quantity for the fine structure

• US 7,520,165 B2
• Filed: 06/07/2006
• Issued: 04/21/2009
• Est. Priority Date: 06/09/2005
• Status: Active Grant

• Current Assignee: TDK Corporation
• Original Assignee: TDK Corporation
• Inventors: Ohta, Naoki, Kuwashima, Tetsuya
• Primary Examiner(s): LARKIN, DANIEL SEAN
• Application Number:
  US11/422,725
• Publication Number:
  US 20060277981A1
• Time in Patent Office: 1,049 Days
• Field of Search: 731/05
• US Class Current: 73/105
• CPC Class Codes: B82Y 35/00 Methods or apparatus for measurement or analysis of nanostructures
• CPC Class Codes: G01P 15/0894 by non-contact electron transfer, i.e. electron tunneling
• CPC Class Codes: G01Q 20/04 Self-detecting probes, i.e. wherein the probe itself generates a signal representative of its position, e.g. piezoelectric gauge

Abstract

Highly efficient and highly sensitive sensors of small size are provided in desired position, desired shape and size for a micro structure that causes elastic deformation at least a part thereof. Moreover, utilizing the sensors allows facilitating to assemble and adjust the components, miniaturizing and simplifying the detection circuit, and measuring a local displacement of a fine part of the micro structure. A micro structure is a cantilever in which a beam part causes elastic deformation. This cantilever includes a sensor detecting elastic deformation of a beam part by tunneling effect.

Claims

1. A micro structure in which at least a part of the micro structure causes elastic deformation, the micro structure comprising:

a plurality of sensors to detect said elastic deformation by a tunneling effect, said plurality of sensors being positioned on a same surface of said part of the micro structure so that in at least two sensors of the plurality of sensors respective longer axes of each of members of said two sensors of said plurality of sensors cross at right angles mutually,

wherein each of said sensors comprises an insulating layer that forms a single tunneling barrier between a lower electrode and an upper electrode that have conductivity together.

2. The micro structure of claim 1, wherein said lower electrode and said upper electrode planarly face each other across said insulating layer that forms said single tunneling barrier.

3. The micro structure of claim 2, wherein thickness of said insulating layer that forms said single tunneling barrier is less than or equal to 2.5 nm.

4. The micro structure of claim 1, wherein at least a part of said micro structure has conductivity and is used for said upper electrode or said lower electrode.

5. The micro structure of claim 1, wherein said sensor detects said elastic deformation of said micro structure as a change of electric resistance by a change of tunneling current.

6. The micro structure of claim 1, wherein a resistance area product, that is the product of resistance and surface area, of the sensor is 100 kΩ

·

μ

m² or less.

7. A cantilever of a scanning probe microscope, comprising:

a micro structure in which at least a part of the micro structure causes elastic deformation, said micro structure comprising;

a plurality of sensors to detect said elastic deformation by a tunneling effect, said plurality of sensors being positioned on a same surface of said part of the micro structure so that in at least two sensors of the plurality of sensors respective longer axes of each of members of said two sensors of said plurality of sensors cross at right angles mutually,

wherein each of said sensors comprises an insulating layer that forms a single tunneling barrier between a lower electrode and an upper electrode that have conductivity together;

wherein

when a front end of said cantilever is made to approach a specimen surface, said front end is made to scan the specimen in two dimensions relatively, and said scanning probe microscope detects a physical quantity working with said specimen surface and said front end of said cantilever as a deformation quantity.

8. The cantilever of claim 7, wherein said lower electrode and said upper electrode planarly face each other across said insulating layer that forms said single tunneling barrier.

9. The cantilever of claim 8, wherein thickness of said insulating layer that forms said single tunneling barrier is less than or equal to 2.5 nm.

10. The cantilever of claim 7, wherein at least a part of said micro structure has conductivity and is used for said upper electrode or said lower electrode.

11. The cantilever of claim 7, wherein said sensor detects said elastic deformation of said micro structure as a change of electric resistance by a change of tunneling current.

12. The cantilever of claim 7, wherein a resistance area product, that is the product of resistance and surface area, of the sensor is 100 kΩ

·

μ

m² or less.

13. A scanning probe microscope comprising:

a cantilever of the scanning probe microscope, comprising;

a micro structure in which at least a part of the micro structure causes elastic deformation, said micro structure comprising;

a plurality of sensors to detect said elastic deformation by a tunneling effect, said plurality of sensors being positioned on a same surface of said part of the micro structure so that in at least two sensors of the plurality of sensors respective longer axes of each of members of said two sensors of said plurality of sensors cross at right angles mutually,

wherein each of said sensors comprises an insulating layer that forms a single tunneling baffler between a lower electrode and an upper electrode that have conductivity together;

wherein

when a front end of said cantilever is made to approach a specimen surface, said front end is made to scan the specimen in two dimensions relatively, and said scanning probe microscope detects a physical quantity working with said specimen surface and said front end of said cantilever as a deformation quantity.

14. The scanning probe microscope of claim 13, wherein said lower electrode and said upper electrode planarly face each other across said insulating layer that forms said single tunneling barrier.

15. The scanning probe microscope of claim 14, wherein thickness of said insulating layer that forms said single tunneling barrier is less than or equal to 2.5 nm.

16. The scanning probe microscope of claim 13, wherein at least a part of said micro structure has conductivity and is used for said upper electrode or said lower electrode.

17. The scanning probe microscope of claim 13, wherein said sensor detects said elastic deformation of said micro structure as a change of electric resistance by a change of tunneling current.

18. The scanning probe microscope of claim 13, wherein a resistance area product, that is the product of resistance and surface area, of the sensor is 100 kΩ

·

μ

m² or less.

19. A method for measuring deformation quantity for a micro structure comprising:

providing plural sensors to detect elastic deformations by a tunneling effect in the micro structure that causes the elastic deformation, said plurality of sensors being positioned on a same surface of said part of the micro structure so that in at least two sensors of the plurality of sensors respective longer axes of each of members of said two sensors of said plurality of sensors cross at right angles mutually; and

detecting the elastic deformation of each part of said micro structure as a change of electric resistance by the plural sensors,

wherein each sensor comprises an insulating layer that forms a single tunneling barrier between a lower electrode and an upper electrode that have conductivity together.

20. The method for measuring deformation quantity for the micro structure of claim 19, wherein at least a part of said micro structure has conductivity and is used for said upper electrode or said lower electrode.