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Micro-electromechanical structure with self-compensation of the thermal drifts caused by thermomechanical stress

  • US 7,520,171 B2
  • Filed: 09/14/2005
  • Issued: 04/21/2009
  • Est. Priority Date: 09/22/2004
  • Status: Active Grant
First Claim
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1. A micro-electromechanical structure of semiconductor material, comprising:

  • a detection structure including a stator and a rotor, which are mobile with respect to one another in presence of an external stress and are subject to thermal stress;

    a micro-electromechanical compensation structure subject to said thermal stress and invariant with respect to said external stress, said compensation structure being connected to said detection structure such that said micro-electromechanical compensation structure supplies an output signal correlated to said external stress and compensated in temperature.

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