Lid assembly for front end of line fabrication

• US 7,520,957 B2
• Filed: 05/24/2005
• Issued: 04/21/2009
• Est. Priority Date: 02/26/2004
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Wang, Wei W., Yuan, Xiaoxiong (John), Kao, Chien-Teh, Lu, Xinliang, Huston, Joel M., Chang, Mei, Chang, Yu, Phan, See-Eng, Trinh, Son, Umotoy, Sal, Chou, Jing-Pei (Connie), Lai, Chiukin (Steven)
• Primary Examiner(s): Kackar; Ram N.
• Application Number:
  US11/137,199
• Publication Number:
  US 20050218507A1
• Time in Patent Office: 1,428 Days
• Field of Search: 156/345.34, 156/345.35, 156/345.43, 156/345.45, 118/723.ER, 118/723.IR, 118/723.ME, 118/723.R, 118/723.DC, 118/723.E
• US Class Current: 156/345.43
• CPC Class Codes: C23C 14/022 by means of bombardment with energetic particles or radiation
• CPC Class Codes: C23C 14/50 Substrate holders
• CPC Class Codes: C23C 14/541 Heating or cooling of the substrates
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01J 37/32541 Shape
• CPC Class Codes: H01J 37/32568 Relative arrangement or disposition of electrodes; moving means
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01L 21/02104 Forming layers deposition in general C23C; crystal growth in general C30B
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.

Claims

1. A lid assembly for semiconductor processing, comprising:

a first electrode comprising an expanding section that has a gradually increasing inner diameter;

a second electrode disposed opposite the first, wherein a plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode and wherein the second electrode comprises a plurality of gas passages that are in fluid communication with the plasma cavity; and

an isolation ring disposed about an outer diameter of the expanding section,

wherein the isolation ring and the expanding section of the first electrode fit within a recess formed in the first surface of the second electrode.

2. A lid assembly for semiconductor processing, comprising:

a first electrode comprising an expanding section having a gradually increasing inner diameter; and

a second electrode disposed opposite the first electrode, wherein the second electrode comprises a plurality of gas passages formed there through and wherein a plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode; and

a perforated plate disposed opposite a second surface of the second electrode, wherein the perforations of the perforated plate are in fluid communication with the plurality of gas passages of the second electrode, wherein;

the second electrode and the perforated plate each comprise a notched outer diameter, and

the notched outer diameter of the second electrode is adapted to mount on the notched outer diameter of the perforated plate;

the said lid assembly further comprising an isolation ring disposed about an outer diameter of the expanding section, wherein the isolation ring and the expanding section of the first electrode fit within a recess formed in the first surface of the second electrode.

3. The lid assembly of claim 2, wherein the perforated plate includes a fluid channel embedded in an outer diameter thereof for conveying a heating medium to heat the perforated plate.

4. The lid assembly of claim 2, wherein the perforated plate convectively heats the second electrode.

5. A lid assembly for semiconductor processing, comprising:

a first electrode comprising an expanding section having a gradually increasing inner diameter;

a second electrode disposed opposite the first electrode, wherein the second electrode comprises a plurality of gas passages formed there through and wherein a plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode;

a first perforated plate disposed opposite a second surface of the second electrode; and

a second perforated plate disposed between the second electrode and the first perforated plate, wherein;

the second electrode and the first perforated plate each comprise a notched outer diameter,

the notched outer diameter of the second electrode is adapted to mount on the notched outer diameter of the first perforated plate; and

at least a portion of the second perforated plate is adapted to mount to the second surface of the second electrode;

the said lid assembly, further comprising an isolation ring disposed about an outer diameter of the expanding section, wherein the isolation ring and the expanding section of the first electrode fit within a recess formed in the first surface of the second electrode.

6. The lid assembly of claim 5, wherein the first perforated plate includes a fluid channel embedded in an outer diameter thereof for conveying a heating medium to heat the first perforated plate.

7. The lid assembly of claim 5, wherein the expanding section of the first electrode is connected to a RF power source and adapted to confine a plasma of reactive gases within the plasma cavity.

8. The lid assembly of claim 5, wherein the perforations of the first and second perforated plates are in fluid communication with the gas passages of the second electrode.