Light emitting device methods
First Claim
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1. A method of making a light emitting device, the method comprising:
- providing a first multi-layer stack, comprising;
a substrate;
a submount, anda semiconductor layer between the substrate and the submount, the semiconductor layer being supported by the submount wherein the semiconductor layer and submount are selected so that a coefficient of thermal expansion of the submount differs from a coefficient of thermal expansion of the semiconductor layer by less than about 15%; and
exposing the semiconductor layer to electromagnetic radiation to partially decompose the semiconductor layer; and
removing the substrate from the first multi-layer stack to form a second multi-layer stack.
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Abstract
Light-emitting device methods are disclosed.
143 Citations
91 Claims
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1. A method of making a light emitting device, the method comprising:
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providing a first multi-layer stack, comprising; a substrate; a submount, and a semiconductor layer between the substrate and the submount, the semiconductor layer being supported by the submount wherein the semiconductor layer and submount are selected so that a coefficient of thermal expansion of the submount differs from a coefficient of thermal expansion of the semiconductor layer by less than about 15%; and exposing the semiconductor layer to electromagnetic radiation to partially decompose the semiconductor layer; and removing the substrate from the first multi-layer stack to form a second multi-layer stack. - View Dependent Claims (2, 3, 4, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87)
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5. A method of making a light emitting device, the method comprising:
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providing a first multi-layer stack, comprising; a substrate; a submount that is thicker than the substrate; and a semiconductor layer between the substrate and the submount, the semiconductor layer being supported by the submount, wherein the semiconductor layer and submount are selected so that a coefficient of thermal expansion of the submount differs from a coefficient of thermal expansion of the semiconductor layer by less than about 15%; and exposing the semiconductor layer to electromagnetic radiation to partially decompose the semiconductor layer; and removing the substrate from the first multi-layer stack to form a second multi-layer stack. - View Dependent Claims (6, 7, 8)
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88. A method of making a light emitting device, the method comprising:
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providing a first multi-layer stack in the form of a wafer, comprising; a substrate; a submount; and a semiconductor layer between the substrate and the submount, the semiconductor layer supported by the substrate, wherein the substrate and the submount are selected so that a coefficient of thermal expansion of the submount differs from a coefficient of thermal expansion of the substrate by less than about 15%; and exposing the semiconductor layer to electromagnetic radiation to partially decompose the semiconductor layer; and removing the substrate from the first multi-layer stack to form a second multi-layer stack. - View Dependent Claims (89, 90, 91)
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Specification