Stretchable form of single crystal silicon for high performance electronics on rubber substrates

• US 7,521,292 B2
• Filed: 06/09/2006
• Issued: 04/21/2009
• Est. Priority Date: 06/04/2004
• Status: Active Grant

• Current Assignee: Board of Trustees of The University of Illinois
• Original Assignee: Board of Trustees of The University of Illinois
• Inventors: Sun, Yugang, Khang, Dahl-Young, Rogers, John A.
• Primary Examiner(s): Wojciechowicz; Edward
• Application Number:
  US11/423,287
• Publication Number:
  US 20060286785A1
• Time in Patent Office: 1,047 Days
• Field of Search: 438/118, 438/149, 438/455, 438/457, 438/479, 438/584, 257/9, 257/40, 257/619, 439/67
• US Class Current: 438/118
• CPC Class Codes: B81C 2201/0185 Printing, e.g. microcontact printing
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/80894 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 23/3157 Partial encapsulation or coating mask layer used as insulation layer H01L21/31
• CPC Class Codes: H01L 23/5387 Flexible insulating substrates H01L23/5388 takes precedence
• CPC Class Codes: H01L 23/564 Details not otherwise provided for, e.g. protection against moisture getters H01L23/26
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/80 Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 27/1266 : the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/1285 : using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 : using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/06 : characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
• CPC Class Codes: H01L 29/0665 : the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 : oriented parallel to a substrate
• CPC Class Codes: H01L 29/0676 : oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/068 : comprising a junction
• CPC Class Codes: H01L 29/151 : Compositional structures H01L29/157 and H01L29/158 take precedence
• CPC Class Codes: H01L 29/158 : Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]
• CPC Class Codes: H01L 29/16 : including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 29/1602 : Diamond
• CPC Class Codes: H01L 29/1606 : Graphene
• CPC Class Codes: H01L 29/72 : Transistor-type devices, i.e. able to continuously respond to applied control signals
• CPC Class Codes: H01L 29/7781 : with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
• CPC Class Codes: H01L 29/78603 : characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78681 : having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
• CPC Class Codes: H01L 29/78696 : characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01002 : Helium [He]
• CPC Class Codes: H01L 2924/01003 : Lithium [Li]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/0101 : Neon [Ne]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01067 : Holmium [Ho]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/10336 : Aluminium gallium arsenide [AlGaAs]
• CPC Class Codes: H01L 2924/10349 : Aluminium gallium indium phosphide [AlGaInP]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/13063 : Metal-Semiconductor Field-Effect Transistor [MESFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01L 31/0392 : including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate textured substrates H01L31/02366
• CPC Class Codes: H01L 31/03925 : including AIIBVI compound materials, e.g. CdTe, CdS
• CPC Class Codes: H01L 31/03926 : comprising a flexible substrate
• CPC Class Codes: H01L 31/18 : Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 31/1804 : comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H05K 1/0277 : Bendability or stretchability details H05K1/038, H05K3/4691 take precedence
• CPC Class Codes: H05K 1/0283 : Stretchable printed circuits
• CPC Class Codes: Y02E 10/547 : Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Claims

1. A method for making a stretchable semiconductor element, said method comprising the steps of:

providing a transferable single crystalline semiconductor structure having a surface;

providing a prestrained elastic substrate in an expanded state, wherein said elastic substrate has an external surface;

printing said transferable single crystalline semiconductor structure to said external surface of said prestrained elastic substrate;

thereby continuously bonding said surface of said transferable single crystalline semiconductor structure to said external surface of said prestrained elastic substrate in the expanded state; and

allowing said prestrained elastic substrate to at least partially relax to a relaxed state, wherein relaxation of the prestrained elastic substrate generates a force that bends said single crystalline semiconductor structure continuously bonded to said prestrained elastic substrate, thereby generating said stretchable semiconductor element.

2. The method of claim 1 wherein said prestrained elastic substrate is expanded along a first axis or is expanded along first and second axes, wherein said second axis is positioned orthogonal to said first axis.

3. The method of claim 1 wherein said elastic substrate is prestrained by introducing a strain of about 1% to about 30%.

4. The method of claim 1 wherein said prestrained elastic substrate in an expanded state is formed by bending, rolling, flexing or expanding said elastic substrate.

5. The method of claim 1 wherein said prestrained elastic substrate in an expanded state is formed by raising the temperature of said elastic substrate.

6. The method of claim 1 further comprising the step of transferring said stretchable semiconductor element to a flexible receiving substrate.

7. The method of claim 1 wherein continuously bonding said surface of said transferable single crystalline semiconductor structure to said external surface of said prestrained elastic substrate is provided by covalent bonding, van der Waals interactions, dipole-dipole interactions or hydrogen bonding or any combination of these interactions between said surface of said single crystalline semiconductor structure and said external surface of said prestrained elastic substrate.

8. The method of claim 1 wherein said external surface of said prestrained elastic substrate has a plurality of hydroxyl groups disposed thereon to provide continuous bonding between said surface of said single crystalline semiconductor structure and said external surface of said prestrained elastic substrate.

9. The method of claim 1 wherein continuously bonding said surface of said transferable single crystalline semiconductor structure to said external surface of said prestrained elastic substrate is provided by an adhesive thin film between said single crystalline semiconductor structure and said elastic substrate.

10. The method of claim 1 further comprising the step of encapsulating said stretchable semiconductor element with an encapsulating layer.

19. The method of claim 1, wherein said printing step comprises dry transfer contact printing.

20. The method of claim 1, wherein said printing step comprises solution printing.

21. The method of claim 1, wherein said step of allowing said prestrained elastic substrate to at least partially relax to said relaxed state generates a bent single crystalline semiconductor structure having a conformation comprising a periodic wave that extends at least a portion of the length of said structure.

22. The method of claim 1, wherein said step of allowing said prestrained elastic substrate to at least partially relax to said relaxed state generates a bent single crystalline semiconductor structure having a sine wave conformation having a periodicity selected from the range of about 1 micron and 100 microns and an amplitude selected from the range of about 50 nanometers and about 5 microns.

23. The method of claim 1, wherein said step of allowing said prestrained elastic substrate to at least partially relax to said relaxed state generates a bent single crystalline semiconductor structure having a conformation comprising a plurality of buckles that extend along the length of said structure.

24. The method of claim 1, wherein said step of allowing said prestrained elastic substrate to at least partially relax to said relaxed state generates a bent single crystalline semiconductor structure having a conformation that that varies spatially in one-dimension or two dimensions, wherein said surface of said single crystalline semiconductor structure has a contour profile that that varies spatially in one-dimension or two dimensions.

25. The method of claim 1, wherein said single crystalline semiconductor structure is an inorganic semiconductor material.

26. The method of claim 1, wherein said single crystalline semiconductor structure comprises a material selected from the group consisting of:

Si, Ge, SiC, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, GaSb, InSb, ZnO, ZnSe, ZnTe, CdS, CdSe, ZnSe, CdTe, HgS, PbS, PbSe, PbTe, AlGaAs, AlInAs, AlInP, GaAsP, GaInAs, GaInP, AlGaAsSb, AlGaInP, GaInAsP, carbon nanotubes, graphene and GaN.

27. The method of claim 1, wherein said single crystalline semiconductor structure is bonded to said elastic substrate via an adhesive layer, coating or thin film positioned between said semiconductor structure and said elastic substrate.

28. The method of claim 1, wherein the single crystalline semiconductor structure has a thickness selected over the range of about 50 nanometers to about 50 microns.

29. The method of claim 1, wherein said step of allowing said prestrained elastic substrate to at least partially relax to said relaxed state generates a bent single crystalline semiconductor structure under a strain that is equal to or less than 30%.

30. The method of claim 1, wherein said step of allowing said prestrained elastic substrate to at least partially relax to said relaxed state generates a bent single crystalline semiconductor structure under a strain that is equal to or less than 10%.

31. The method of claim 1, wherein said step of allowing said prestrained elastic substrate to at least partially relax to said relaxed state generates a bent single crystalline semiconductor structure under a strain that is equal to or less than 1%.

32. The method of claim 1, wherein said step of allowing said prestrained elastic substrate to at least partially relax to said relaxed state generates a bent single crystalline semiconductor structure under a strain that is selected from a range of 0.5% to 30%.

33. The method of claim 1, wherein said step of allowing said prestrained elastic substrate to at least partially relax to said relaxed state generates a bent single crystalline semiconductor structure under a strain that is selected from a range of 0.5% to 10%.

34. The method of claim 1, wherein said step of allowing said prestrained elastic substrate to at least partially relax to said relaxed state generates a bent single crystalline semiconductor structure under a strain that is selected from a range of 0.5% to 5%.

35. The method of claim 1, wherein said elastic substrate is prestrained by introducing a strain of about 3% to about 15%.

36. The method of claim 1, wherein said elastic substrate is an elastomer.

11. A method for making a stretchable electronic circuit, said method comprising the steps of:

providing a transferable electronic circuit having a surface, wherein said transferable electronic circuit comprises a plurality of integrated device components including a single crystalline semiconductor structure;

providing a prestrained elastic substrate in an expanded state, wherein said elastic substrate has an external surface;

printing said transferable electronic circuit to said external surface of said prestrained elastic substrate;

thereby continuously bonding said surface of said transferable electronic circuit to said external surface of said prestrained elastic substrate in said expanded state; and

allowing said prestrained elastic substrate to relax at least partially to a relaxed state, wherein relaxation of the prestrained elastic substrate generates a force that bends said transferable electronic circuit continuously bonded to said prestrained elastic substrate, thereby making said stretchable electronic circuit.

12. The method of claim 11 wherein said prestrained elastic substrate is expanded along a first axis or is expanded along first and second axes, wherein said second axis is positioned orthogonal to said first axis.

13. The method of claim 11 wherein said elastic substrate is prestrained by introducing a strain of about 1% to about 30%.

14. The method of claim 11 wherein said prestrained elastic substrate in an expanded state is formed by bending, rolling, flexing, expanding or raising the temperature of said elastic substrate.

15. The method of claim 11 further comprising the step of transferring said stretchable electronic circuit to a receiving substrate that is flexible.

16. The method of claim 11 further comprising the step of encapsulating said stretchable electronic circuit with an encapsulating layer.

17. The method of claim 11 further comprising the steps of:

assembling said transferable electronic circuit on a donor substrate; and

printing said transferable electronic circuit on said donor substrate to said prestrained elastic substrate in an expanded state.

18. The method of claim 11 wherein continuously bonding said surface of said transferable electronic circuit to said external surface of said prestrained elastic substrate is provided by an adhesive thin film between said transferable electronic circuit and said elastic substrate.