Semiconductor device and method for manufacturing the same

• US 7,521,324 B2
• Filed: 03/31/2004
• Issued: 04/21/2009
• Est. Priority Date: 04/03/2003
• Status: Expired due to Fees

• Current Assignee: Tahahiro Ohmi, Tokyo Electron Limited
• Original Assignee: Tadahiro Ohmi, Tokyo Electron Limited
• Inventors: Wakamatsu, Hidetoshi, Ohmi, Tadahiro, Kobayashi, Yasuo, Teramoto, Akinobu
• Primary Examiner(s): Richards; N Drew
• Assistant Examiner(s): Withers; Grant S
• Application Number:
  US10/551,843
• Publication Number:
  US 20070052042A1
• Time in Patent Office: 1,847 Days
• Field of Search: 438/258, 438/287, 438/775, 438/776, 438/777
• US Class Current: 438/287
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/28167 on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/318 composed of nitrides
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO₂ from being formed.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming a precursor film consisting essentially of a mixture of at least one metal and silicon,

forming a gate insulation film by performing a nitriding treatment on the precursor film, and

forming a gate electrode layer on the gate insulation film, wherein the gate insulation film is a high relative permittivity (high-k) film;

wherein the gate insulation film is formed according to a plasma CVD technology.

2. The method for manufacturing the semiconductor device as claimed in claim 1, further comprising the step of forming a silicon nitride film as a barrier layer between the silicon substrate and the gate insulation film.

3. The method for manufacturing the semiconductor device as claimed in claim 2, wherein the silicon nitride film is formed according to a direct nitriding by plasma.

4. The method for manufacturing the semiconductor device as claimed in claim 1, wherein a silicon nitride film is disposed on the gate insulation film.

5. The method for manufacturing the semiconductor device as claimed in claim 4, wherein the silicon nitride film and the gate insulation film are alternately laminated on the silicon substrate.

6. The method for manufacturing the semiconductor device as claimed in claim 1, further comprising the step of forming a buffer layer between the silicon substrate and the gate insulation film.

7. The method for manufacturing the semiconductor device as claimed in claim 1, further comprising the step of forming an alumina (Al₂O₃) monocrystal film between the silicon substrate and the gate insulation film.

8. The method for manufacturing the semiconductor device as claimed in claim 7, wherein the alumina monocrystal film is formed according to a plasma CVD technology.

9. The method for manufacturing the semiconductor device as claimed in claim 1, wherein the gate insulation film has one of compositions selected from a following list:

M₃Si₆N₁₁ (M = La, Ce, Pr, Nd, Sm);

M₂Si₅N₈ (M = Ca, Sr, Ba, Eu);

MYbSi₄M₇ (M = Sr, Ba, Eu);

BaSi₄N₇;

Ba₂Nd₇Si₁₁N₂₃.

10. The method for manufacturing the semiconductor device as claimed in claim 2, wherein a silicon nitride film is disposed on the gate insulation film.

11. A method for manufacturing a semiconductor device comprising the steps of:

forming a precursor film consisting essentially of a mixture of at least one metal and silicon,

forming a gate insulation film by performing a nitriding treatment on the precursor film, and

forming a gate electrode layer directly on the gate insulation film, wherein the gate insulation film is formed directly on a silicon substrate, and the gate insulation film is a high relative permittivity (high-k) film;

wherein the gate insulation film is formed according to a plasma CVD technology.