Semiconductor light emitting diode having textured structure and method of manufacturing the same

• US 7,521,329 B2
• Filed: 12/30/2005
• Issued: 04/21/2009
• Est. Priority Date: 12/31/2004
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Lee, Jeong-wook, Kwak, Joon-seop
• Primary Examiner(s): Le; Thao X
• Assistant Examiner(s): Ullah; Elias
• Application Number:
  US11/320,811
• Publication Number:
  US 20060157719A1
• Time in Patent Office: 1,208 Days
• Field of Search: 438/983, 438/380, 438/328, 257/E21.368
• US Class Current: 438/328
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A semiconductor light emitting diode having a textured structure and a method of manufacturing the semiconductor light emitting diode are provided. The method includes forming a first semiconductor layer on a substrate; forming a textured structured first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and forming a second semiconductor layer on the first semiconductor layer.

Claims

1. A method of manufacturing a semiconductor light emitting diode, comprising:

forming a first semiconductor layer on a substrate;

forming a textured structure first semiconductor layer having first and second material layers by penetrating the material layers into the first semiconductor layer after the material layers are formed on the first semiconductor layer and are annealed;

forming a second semiconductor layer on the first semiconductor layer; and

etching the first semiconductor layer to remove the second material layer from the first semiconductor layer after the first material layer and the second material layer have penetrated into the first semiconductor layer.

2. The method of claim 1, wherein the forming of the textured structured first semiconductor layer comprises:

forming the first material layer on the first semiconductor layer;

forming the second material layer on the first material layer; and

annealing to cause the first and second material layers to penetrate into the first semiconductor layer.

3. The method of claim 2, wherein the first material layer is formed of one selected from Ni and Pd.

4. The method of claim 2, wherein the second material layer is formed of one selected from Ag and Au.

5. The method of claim 2, wherein the forming of a textured structured first semiconductor layer comprises annealing to cause the material layers to penetrate into a defect region of the first semiconductor layer after the material layers are formed.

6. The method of claim 5, further comprising removing the material penetrated into the first semiconductor layer from the first semiconductor layer, depositing one of SiO₂ and SiN on the first semiconductor layer, and leaving SiO₂ or SiN only in the textured structure of the first semiconductor layer by treating a surface of the first semiconductor layer.

7. The method of claim 5, wherein the annealing is performed under a nitrogen atmosphere.

8. The method of claim 7, further comprising annealing under an oxygen atmosphere after annealing under the nitrogen atmosphere.

9. The method of claim 1, wherein the first semiconductor layer is formed of a compound having a formula In_xAl_yGa_1-x-y N_1-x-y(0≦

x≦

1, 0≦

y≦

1, x+y≦

1) undoped, doped with an n-type dopant, or doped with a p-type dopant.

10. The method of claim 1, wherein the first semiconductor layer has a thickness of approximately 10 nm to 5 μ

m.

11. A method of manufacturing a semiconductor light emitting diode comprising:

forming a first semiconductor layer on a substrate;

forming a textured structure first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and

forming a second semiconductor layer on the first semiconductor layer;

wherein the forming of the textured structured first semiconductor layer comprises;

forming a first material layer on the first semiconductor layer;

forming a second material layer of a material selected from Ag and An on the first material layer; and

annealing to cause the first and second material layers to penetrate into the first semiconductor layer etching the first semiconductor layer to remove Au from the first semiconductor layer using aqua regia after the materials of the first material layer and the second material layer have penetrated into the first semiconductor layer.

12. A semiconductor light emitting diode comprising:

a first semiconductor layer formed in a textured structure;

a material region having first and second material layers which is formed between the textured structures of the first semiconductor layer wherein the first and second material layers include at least one metal selected from Ni, Pd, Au, and Ag;

a second semiconductor layer;

and active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the material region when the first semiconductor layer is etched to remove at least one metal of the second material layer from the first semiconductor layer after the at least one metal of the second material layer has penetrate into the first semiconductor layer.

13. The semiconductor light emitting diode of claim 12, wherein the first semiconductor layer is formed of a compound having a formula In_xAl_yGa_1-x-y N_1-x-y(0≦

x≦

1, 0≦

y≦

1, x+y≦

1), undoped, doped with an n-type dopant, or doped with a p-type dopant.

14. The semiconductor light emitting diode of claim 12, wherein the first semiconductor layer has a thickness of approximately 10 nm to 5 μ

m.