Semiconductor light emitting diode having textured structure and method of manufacturing the same
First Claim
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1. A method of manufacturing a semiconductor light emitting diode, comprising:
- forming a first semiconductor layer on a substrate;
forming a textured structure first semiconductor layer having first and second material layers by penetrating the material layers into the first semiconductor layer after the material layers are formed on the first semiconductor layer and are annealed;
forming a second semiconductor layer on the first semiconductor layer; and
etching the first semiconductor layer to remove the second material layer from the first semiconductor layer after the first material layer and the second material layer have penetrated into the first semiconductor layer.
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Abstract
A semiconductor light emitting diode having a textured structure and a method of manufacturing the semiconductor light emitting diode are provided. The method includes forming a first semiconductor layer on a substrate; forming a textured structured first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and forming a second semiconductor layer on the first semiconductor layer.
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Citations
14 Claims
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1. A method of manufacturing a semiconductor light emitting diode, comprising:
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forming a first semiconductor layer on a substrate; forming a textured structure first semiconductor layer having first and second material layers by penetrating the material layers into the first semiconductor layer after the material layers are formed on the first semiconductor layer and are annealed;
forming a second semiconductor layer on the first semiconductor layer; and
etching the first semiconductor layer to remove the second material layer from the first semiconductor layer after the first material layer and the second material layer have penetrated into the first semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a semiconductor light emitting diode comprising:
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forming a first semiconductor layer on a substrate; forming a textured structure first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and forming a second semiconductor layer on the first semiconductor layer; wherein the forming of the textured structured first semiconductor layer comprises; forming a first material layer on the first semiconductor layer; forming a second material layer of a material selected from Ag and An on the first material layer; and
annealing to cause the first and second material layers to penetrate into the first semiconductor layer etching the first semiconductor layer to remove Au from the first semiconductor layer using aqua regia after the materials of the first material layer and the second material layer have penetrated into the first semiconductor layer.
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12. A semiconductor light emitting diode comprising:
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a first semiconductor layer formed in a textured structure; a material region having first and second material layers which is formed between the textured structures of the first semiconductor layer wherein the first and second material layers include at least one metal selected from Ni, Pd, Au, and Ag;
a second semiconductor layer;and active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the material region when the first semiconductor layer is etched to remove at least one metal of the second material layer from the first semiconductor layer after the at least one metal of the second material layer has penetrate into the first semiconductor layer. - View Dependent Claims (13, 14)
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Specification