Apparatus and method for doping

• US 7,521,699 B2
• Filed: 11/28/2007
• Issued: 04/21/2009
• Est. Priority Date: 05/15/1996
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hamatani, Toshiji, Tanaka, Koichiro, Yamazaki, Shunpei
• Primary Examiner(s): NGUYEN, KIET TUAN
• Application Number:
  US11/946,125
• Publication Number:
  US 20080070389A1
• Time in Patent Office: 510 Days
• Field of Search: 250/492.21, 250/398, 438/514, 438/528
• US Class Current: 250/492.21
• CPC Class Codes: H01J 2237/057 Energy or mass filtering
• CPC Class Codes: H01J 2237/0817 Microwaves
• CPC Class Codes: H01J 2237/304 Controlling tubes
• CPC Class Codes: H01J 37/05 Electron or ion-optical arrangements for separating electrons or ions according to their energy or massparticle separator tubes H01J49/00
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns
• CPC Class Codes: H01J 37/147 Arrangements for directing or deflecting the discharge along a desired path H01J37/045 take precedence; lenses H01J37/10
• CPC Class Codes: H01J 37/3171 for ion implantation
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32752 for moving the material across the discharge
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Abstract

There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.

Claims

1. A method for manufacturing a semiconductor device comprising:

radiating an ion beam which mainly includes a hydrogen ion to a substrate, wherein the hydrogen ion beam is elongated in one direction on a surface of the substrate.

2. A method for manufacturing a semiconductor device according to claim 1, wherein the substrate is a glass substrate.

3. A method for manufacturing a semiconductor device according to claim 1, wherein the substrate is moved in a direction perpendicular to the one direction in the radiating step.

4. A method for manufacturing a semiconductor device according to claim 1, wherein a density of the hydrogen ion is 50 to 90% in a plasma.

5. A method for manufacturing a semiconductor device according to claim 1, wherein the hydrogen ion is H⁺ or H₂⁺ ion.

6. A method for manufacturing a semiconductor device comprising:

obliquely radiating an ion beam which mainly includes a hydrogen ion to a substrate, wherein the hydrogen ion beam is elongated in one direction on a surface of the substrate.

7. A method for manufacturing a semiconductor device according to claim 6, wherein the substrate is a glass substrate.

8. A method for manufacturing a semiconductor device according to claim 6, wherein the substrate is moved in a direction perpendicular to the one direction in the radiating step.

9. A method for manufacturing a semiconductor device according to claim 6, wherein a density of the hydrogen ion is 50 to 90% in a plasma.

10. A method for manufacturing a semiconductor device according to claim 6, wherein the hydrogen ion is H⁺ or H₂⁺ ion.

11. A method for manufacturing a semiconductor device comprising:

doping an ion beam which mainly includes a hydrogen ion into a semiconductor region, wherein the hydrogen ion beam is elongated in one direction on a surface of the semiconductor region.

12. A method for manufacturing a semiconductor device according to claim 11, wherein the semiconductor region is moved in a direction perpendicular to the one direction in the doping step.

13. A method for manufacturing a semiconductor device according to claim 11, wherein a density of the hydrogen ion is 50 to 90% in a plasma.

14. A method for manufacturing a semiconductor device according to claim 11, wherein the hydrogen ion is H⁺ or H₂⁺ ion.

15. A method for manufacturing a semiconductor device comprising:

obliquely doping an ion beam which mainly includes a hydrogen ion to a semiconductor region, wherein the hydrogen ion beam is elongated in one direction on a surface of the semiconductor region.

16. A method for manufacturing a semiconductor device according to claim 15, wherein the semiconductor region is moved in a direction perpendicular to the one direction in the doping step.

17. A method for manufacturing a semiconductor device according to claim 15, wherein a density of the hydrogen ion is 50 to 90% in a plasma.

18. A method for manufacturing a semiconductor device according to claim 15, wherein the hydrogen ion is H⁺ or H₂⁺ ion.