Power device with improved edge termination
First Claim
Patent Images
1. A field effect transistor comprising:
- an active region;
a termination region surrounding the active region; and
a resistive element coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current staffs to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region,wherein during operation, one end of the resistive element is biased to ground potential.
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Abstract
A field effect transistor includes an active region and a termination region surrounding the active region. A resistive element is coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region.
50 Citations
24 Claims
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1. A field effect transistor comprising:
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an active region; a termination region surrounding the active region; and a resistive element coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current staffs to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region, wherein during operation, one end of the resistive element is biased to ground potential. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A field effect transistor comprising:
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an active region; a termination region surrounding the active region; a resistive means coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and when the avalanche current reaches a predetermined level the resistive means operates to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region, wherein during operation, one end of the resistive means is biased to ground potential. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A field effect transistor comprising:
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an active region; a termination region surrounding the active region; and a resistive element coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region, wherein the termination region includes a termination well of a first conductivity type extending to a first depth within a drift region of a second conductivity type, and the active region includes an active well of the first conductivity type extending to a second depth within the drift region, the first depth being deeper than the second depth, and wherein the termination well forms one end of the resistive element, and the other end of the resistive element is biased to ground potential during operation.
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19. A field effect transistor comprising:
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an active region; a termination region surrounding the active region; and a resistive element coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region, wherein the termination region includes a termination well of a first conductivity type extending to a first depth within a drift region of a second conductivity type, and the active region includes an active well of the first conductivity type extending to a second depth within the drift region, the first depth being deeper than the second depth, and wherein the termination well forms a ring surrounding the active region, the termination well comprising a plurality of discontinuous well contact regions intermittently placed around the active region, the plurality of well contact regions being of the first conductivity type.
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20. A field effect transistor comprising:
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an active region; a termination region surrounding the active region; a resistive element coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and the resistive element is configured to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region; an interconnect layer having a first portion extending over the active region and a second portion extending over the termination region; and a dielectric layer partially insulating the first and second portions of the interconnect layer from one another, the second portion of the interconnect layer forming a part of the resistive element. - View Dependent Claims (21)
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22. A field effect transistor comprising:
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an active region; a termination region surrounding the active region; and a resistive means coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and when the avalanche current reaches a predetermined level the resistive means operates to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region, wherein the termination region includes a termination well of first conductivity type extending to a first depth within a drift region of a second conductivity type, and wherein the termination well forms one end of the resistive means, and the other end of the resistive means is biased to ground potential during operation.
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23. A field effect transistor comprising:
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an active region; a termination region surrounding the active region; and a resistive means coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and when the avalanche current reaches a predetermined level the resistive means operates to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region, wherein the termination region includes a termination well of first conductivity type extending to a first depth within a drift region of a second conductivity type, and wherein the termination well forms a ring surrounding the active region, the termination well comprising a plurality of discontinuous well contact regions intermittently placed around the active region, the plurality of well contact regions being of the first conductivity type.
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24. A field effect transistor comprising:
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an active region; a termination region surrounding the active region; a resistive means coupled to the termination region, wherein upon occurrence of avalanche breakdown in the termination region an avalanche current starts to flow in the termination region, and when the avalanche current reaches a predetermined level the resistive means operates to induce a portion of the avalanche current to flow through the termination region and a remaining portion of the avalanche current to flow through the active region; an interconnect layer having a first portion extending over the active region and a second portion extending over the termination region; and a dielectric layer partially insulating the first and second portions of the interconnect layer from one another, the second portion of the interconnect layer forming a part of the resistive means.
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Specification