Resist pattern forming method, semiconductor apparatus using said method, and exposure apparatus thereof
First Claim
1. A resist pattern forming method comprising:
- forming a resist film on a substrate;
mounting the substrate formed the resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus comprising a projection optical system;
supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the first chemical solution supplied, wherein the first liquid film has a flow, and wherein the first liquid film is being formed between the resist film and the projection optical system;
transferring the pattern formed on the reticle to the resist film, with the first liquid film being formed, to form a latent image in the resist film;
supplying a second chemical solution onto the resist film to form a second liquid film on a substantially entire surface of the substrate;
removing the second liquid film;
heating the resist film formed the latent image therein after the removal; and
developing the resist film to form a resist pattern from the resist film heated.
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0 Petitions
Accused Products
Abstract
In immersion exposure, a resist pattern forming method suppressing resist pattern defects comprises mounting a substrate formed a resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus, supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the solution, the first liquid film having a flow and being formed between the resist film and a projection optical system, transferring the pattern of the reticle to the resist film through the first liquid film to form a latent image, supplying a second chemical solution onto the resist film to clean the resist film, heating the resist film, and developing the resist film to form a resist pattern from the resist film.
26 Citations
18 Claims
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1. A resist pattern forming method comprising:
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forming a resist film on a substrate; mounting the substrate formed the resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus comprising a projection optical system; supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the first chemical solution supplied, wherein the first liquid film has a flow, and wherein the first liquid film is being formed between the resist film and the projection optical system; transferring the pattern formed on the reticle to the resist film, with the first liquid film being formed, to form a latent image in the resist film; supplying a second chemical solution onto the resist film to form a second liquid film on a substantially entire surface of the substrate; removing the second liquid film; heating the resist film formed the latent image therein after the removal; and developing the resist film to form a resist pattern from the resist film heated. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A resist pattern forming method comprising:
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forming a resist film on a substrate; mounting the substrate formed the resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus comprising a projection optical system; supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the first chemical solution supplied, wherein the first liquid film has a flow, and wherein the first liquid film is being formed between the resist film and the projection optical system; transferring the pattern formed on the reticle to the resist film, with the first liquid film being formed, to form a latent image in the resist film; spraying a gas from a gas injection portion to a part of a surface of the resist film; scanning the gas injection portion over the substantially entire surface of the substrate to spray the gas on the surface of the resist film; heating the resist film formed the latent image therein after the scanning; and developing the resist film to form a resist pattern from the resist film heated. - View Dependent Claims (12, 13, 14, 15)
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16. A resist pattern forming method comprising:
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forming a resist film on a substrate; mounting the substrate formed the resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus comprising a projection optical system; supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the first chemical solution supplied, wherein the first liquid film has a flow, and wherein the first liquid film is formed between the resist film and the projection optical system; controlling a direction of the flow of the first liquid film to flow from an area to which the pattern is transferred towards an edge of the resist film on the substrate when the edge of the resist film is included in the area where the first liquid film is selectively formed; transferring the pattern formed on the reticle to the resist film, with the first liquid film being formed, to form a latent image in the resist film; heating the resist film formed the latent image therein after the removal; and developing the resist film to form a resist pattern from the resist film heated. - View Dependent Claims (17)
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18. A method for manufacturing a semiconductor apparatus, comprising:
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preparing a semiconductor wafer; forming a resist film on the semiconductor wafer; mounting the semiconductor wafer formed the resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus comprising a projection optical system; supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the first chemical solution supplied, wherein the first liquid film has a flow, and wherein the first liquid film is formed between the resist film and the projection optical system; transferring the pattern formed on the reticle to the resist film, with the first liquid film being formed, to form a latent image in the resist film; supplying a second chemical solution onto the resist film to form a second liquid film on a substantially entire surface of the semiconductor wafer; removing the second liquid film; heating the resist film formed the latent image therein after the removing; and forming a resist pattern on the semiconductor wafer by developing the resist film heated.
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Specification