Method of making light emitting diodes (LEDs) with improved light extraction by roughening

• US 7,524,686 B2
• Filed: 03/23/2007
• Issued: 04/28/2009
• Est. Priority Date: 01/11/2005
• Status: Active Grant

• Current Assignee: Semi-Photonics Co, Ltd.
• Original Assignee: SemiLEDs Corporation (SemiLEDs Inc)
• Inventors: Cheng, Hao-Chun, Cheng, Chao-Chen, Chu, Chen-Fu, Fan, Feng-Hsu, Liu, Wen-Huang
• Primary Examiner(s): LE, DUNG ANH
• Application Number:
  US11/690,443
• Publication Number:
  US 20070190676A1
• Time in Patent Office: 767 Days
• Field of Search: 438 22- 29, 438 42- 43
• US Class Current: 438/22
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Methods are provided for fabricating a semiconductor light-emitting diode (LED) device by providing an LED wafer assembly having an LED stack and selectively roughening and/or texturing a light-emitting surface of the LED stack'"'"'s n-doped layer. In this manner, light extraction from the LED device is improved.

Claims

1. A method comprising:

providing a light-emitting diode (LED) wafer assembly having a plurality of LED stacks disposed above a conductive substrate, each of the LED stacks comprising;

a p-doped layer disposed above the conductive substrate;

an active layer for emitting light disposed above the p-doped layer; and

an n-doped layer disposed above the active layer;

applying a protective layer covering a selected portion of a surface of the n-doped layer for each of the plurality of LED stacks;

altering the surface of the n-doped layer by at least one of roughening and texturing, wherein the protective layer shields the selected portion of each of the plurality of LED stacks during the altering;

removing the protective layer; and

forming an n-electrode above the selected portion after removing the protective layer.

2. The method of claim 1, wherein the protective layer comprises at least one of a polymer, a polyimide, a photoresist, a photosensitive material, epoxy, SU-8, NR-7, AZ5214E, thermoplastic, Si₃N₄, SiO₂, ZnO, Ta₂O₅, TiO₂, HfO, and MgO.

3. The method of claim 1, wherein the selected portion comprises an area designated for the n-electrode.

4. The method of claim 1, wherein the selected portion comprises outer edges of the surface of the n-doped layer for one of the plurality of LED stacks.

5. The method of claim 1, wherein the selected portion comprises an area designated for the n-electrode and outer edges of the surface of the n-doped layer for one of the plurality of LED stacks.

6. The method of claim 1, wherein altering the surface comprises at least one of wet etching, photoenhanced wet etching, dry etching, or photoelectrochemical (PEC) oxidation and etching.

7. The method of claim 1, wherein altering the surface comprises applying polystyrene spheres to a remaining portion of each of the plurality of LED stacks not covered by the protective layer.

8. The method of claim 1, wherein the conductive substrate comprises a single layer or multiple layers of at least one of Cu, Ni, Ni—

Co, Ag, Au, Cu—

Co, Cu—

Mo, Ni/Cu, Cu/Ni—

Co/Cu, Cu/Ni—

Co/Cu/Ni—

Co, and Ni/Cu—

Mo.

9. A method comprising:

providing a light-emitting diode (LED) wafer assembly having a plurality of LED stacks disposed above a conductive substrate, each of the LED stacks comprising;

a p-doped layer disposed above the conductive substrate;

an active layer for emitting light disposed above the p-doped layer; and

an n-doped layer disposed above the active layer;

applying a protective layer covering a selected portion of a surface of the n-doped layer for each of the plurality of LED stacks;

altering the surface of the n-doped layer by at least one of roughening and texturing, wherein the protective layer shields the selected portion of each of the plurality of LED stacks during the altering, wherein altering the surface of the n-doped layer comprises;

immersing the surface of the n-doped layer having the protective layer applied in an electrolytic solution;

applying an electrical bias to the conductive substrate; and

illuminating the surface of the n-doped layer such that photoelectrochemical (PEC) oxidation and etching occurs to roughen the surface of the n-doped layer, wherein the protective layer shields the selected portion of each of the plurality of LED stacks during the illuminating; and

removing the protective layer.

10. The method of claim 9, wherein the protective layer comprises at least one of a polymer, a polyimide, a photoresist, a photosensitive material, epoxy, SU-8, NR-7, AZ5214E, thermoplastic, Si₃N₄, SiO₂, ZnO, Ta₂O₅, TiO₂, HfO, and MgO.

11. The method of claim 9, wherein the electrolytic solution can be a combination of an oxidizing agent and either an acid or an alkaline solution.

12. The method of claim 11, wherein the oxidizing agent comprises at least one of H₂O₂ and K₂S₂O₈.

13. The method of claim 11, wherein the acid solution comprises at least one of H₂SO₄, HF, HCl, H₃PO₄, HNO₃, and CH₃COOH.

14. The method of claim 11, wherein the alkaline solution comprises KOH, NaOH, NH₄OH, or combinations thereof.

15. The method of claim 9, wherein the electrical bias ranges from −

10 V to +10 V.

16. A method comprising:

providing a light-emitting diode (LED) wafer comprising a plurality of LED dies;

selectively altering a desired portion of a light-emitting surface of each of the plurality of LED dies by at least one of roughening and texturing, wherein each of the plurality of LED dies has a remaining portion of the light-emitting surface that is excluded from the altering;

wherein altering the light-emitting surface comprises applying polystyrene spheres to the desired portion; and

forming an n-electrode above the remaining portion of the light-emitting surface after the altering.

17. The method of claim 16, wherein selectively altering the desired portion of the light-emitting surface of each of the plurality of LED dies comprises:

applying a protective layer to the light-emitting surface patterned such that the desired portion of each of the plurality of LED dies is uncovered by the protective layer and the remaining portion of each of the plurality of LED dies is covered by the protective layer;

altering the light-emitting surface, the protective layer shielding the remaining portion of each of the plurality of LED dies during the altering; and

removing the protective layer.

18. The method of claim 17, wherein the protective layer comprises at least one of a polymer, a polyimide, a photoresist, a photosensitive material, epoxy, SU-8, NR-7, AZ5214E, thermoplastic, Si₃N₄, SiO₂, ZnO, Ta₂O₅, TiO₂, HfO, and MgO.

19. The method of claim 16, wherein altering the desired portion of the light-emitting surface comprises at least one of wet etching, photoenhanced wet etching, dry etching, or photoelectrochemical (PEC) oxidation and etching.