Manufacturing method for a display device

• US 7,524,709 B2
• Filed: 01/29/2007
• Issued: 04/28/2009
• Est. Priority Date: 11/04/2003
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ishikawa, Akira, Yamaguchi, Tetsuji
• Primary Examiner(s): Jackson, Jr.; Jerome
• Assistant Examiner(s): Budd; Paul A
• Application Number:
  US11/698,862
• Publication Number:
  US 20070128769A1
• Time in Patent Office: 820 Days
• Field of Search: 438/637, 438/622, 438/151, 257E21015-E21021, 349/56, 313/504
• US Class Current: 438/151
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT

Abstract

A technology for easily forming a multi-layer wiring structure that is fine and reliable. In the multi-layer wiring structure, the lower-layer wiring and the upper-layer wiring that are formed to sandwich an insulating layer are electrically connected to each other in a projection formed in the lower-layer wiring. The projection includes a columnar conductive member and the upper and lower layers thereof and each of the lower layer and the upper layer is formed of a conductive layer formed over the entire lower-layer wiring. The upper-layer is electrically connected to the lower-layer wiring in the portion where the projection is exposed substantially on the same plane as the top surface of the insulating layer.

Claims

1. A method for manufacturing a device comprising the steps of:

forming a first insulating film over a substrate;

forming a first opening in the first insulating film;

forming a first conductive film over the first insulating film and in the first opening;

forming a second conductive film over the first conductive film and in the first opening so as to fill in the first opening;

etching the second conductive film so as to form a conductive layer in the first opening and a first columnar conductive member on a portion of the second conductive film, the portion being located apart from the first opening;

forming a third conductive film over the first conductive film, the conductive layer, and the first columnar conductive member, thereby, forming a first projection over the first columnar conductive member;

forming a second insulating film over the third conductive film; and

forming a fourth conductive film over the second insulating film and the third conductive film so as to be electrically connected to a top surface of the first projection.

2. The method for manufacturing a device according to claim 1, further comprising:

etching the fourth conductive film so as to form a second columnar conductive member; and

forming a fifth conductive film over the fourth conductive film and the second columnar conductive member so as to form a second projection over the second columnar conductive member.

3. The method for manufacturing a device according to claim 1, further comprising:

forming a transistor over the substrate before forming the first insulating film,

wherein the first insulating film is formed over the transistor, and

wherein the first conductive film is electrically connected to the transistor through the first opening in the first insulating film.

4. The method for manufacturing a device according to claim 1, wherein the conductive layer and the first columnar conductive member are formed in different positions from each other.

5. The method for manufacturing a device according to claim 1, wherein the first conductive film is used as an etching stopper.

6. The method for manufacturing a device according to claim 1, wherein the device is one of a memory, a processor and a central processing unit.

7. A method for manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

forming a first opening in the first insulating film;

forming a first conductive film over the first insulating film and in the first opening;

forming a second conductive film over the first conductive film and in the first opening so as to fill in the first opening;

etching the second conductive film so as to form a conductive layer in the first opening and a columnar conductive member on a portion of the second conductive film, the portion being located apart from the first opening;

forming a third conductive film over the first conductive film, the conductive layer, and the columnar conductive member, thereby, forming a projection over the columnar conductive member;

forming a second insulating film over the third conductive film;

forming a fourth conductive film over the second insulating film and the third conductive film so as to be electrically connected to a top surface of the projection;

forming a third insulating film over the second insulating film and the fourth conductive film;

forming a second opening in the third insulating film so as to expose the fourth conductive film;

forming a light emitting layer at least in the second opening; and

forming a fifth conductive film over the third insulating film and the light emitting layer.

8. The method for manufacturing a semiconductor device according to claim 7, further comprising:

forming a transistor over the substrate before forming the first insulating film,

wherein the first insulating film is formed over the transistor, and

wherein the first conductive film is electrically connected to the transistor through the first opening in the first insulating film.

9. The method for manufacturing a semiconductor device according to claim 7, wherein the conductive layer and the columnar conductive member are formed in different positions from each other.

10. The method for manufacturing a semiconductor device according to claim 7, wherein the first conductive film is used as an etching stopper.

11. The method for manufacturing a semiconductor device according to claim 7, wherein the semiconductor device is one of a television receiving set, a laptop personal computer and an image reproducing device.

12. A method for manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

forming a first opening in the first insulating film;

forming a first conductive film over the first insulating film and in the first opening;

forming a second conductive film over the first conductive film and in the first opening so as to fill in the first opening;

etching the second conductive film so as to form a conductive layer in the first opening and a columnar conductive member on a portion of the second conductive film, the portion being located apart from the first opening;

forming a third conductive film over the first conductive film, the conductive layer, and the columnar conductive member, thereby, forming a projection over the columnar conductive member;

forming a second insulating film over the third conductive film;

forming a fourth conductive film over the second insulating film and the third conductive film so as to be electrically connected to a top surface of the projection;

forming a liquid crystal layer over the second insulating film and the fourth conductive film; and

forming a fifth conductive film over the liquid crystal layer.

13. The method for manufacturing a semiconductor device according to claim 12, further comprising:

forming a transistor over the substrate before forming the first insulating film,

wherein the first insulating film is formed over the transistor, and

wherein the first conductive film is electrically connected to the transistor through the first opening in the first insulating film.

14. The method for manufacturing a semiconductor device according to claim 12, wherein the conductive layer and the columnar conductive member are formed in different positions from each other.

15. The method for manufacturing a semiconductor device according to claim 12, wherein the first conductive film is used as an etching stopper.

16. The method for manufacturing a semiconductor device according to claim 12, wherein the semiconductor device is one of a television receiving set, a laptop personal computer and an image reproducing device.